SCHEMBL515371

SCHEMBL515371

O=C(Cc1cccc2ccccc12)C[S+]1CCCC1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.39
KMT2A Q03164 4/20 0.35
MEN1 O00255 2/20 0.35
VNN1 O95497 1/20 0.33
ATM Q13315 1/20 0.33
ALDH1A1 P00352 2/20 0.33
RORC P51449 1/20 0.33
HPGD P15428 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
L3MBTL1 Q9Y468 2/20 0.32
CA2 P00918 2/20 0.32
MMP1 P03956 1/20 0.32
MMP2 P08253 1/20 0.32
MMP9 P14780 1/20 0.32
MMP8 P22894 1/20 0.32
MMP13 P45452 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL515337 0.99 TDP1 (0.38) TDP1KMT2AMEN1VNN1ATM
Trifluoromethanesulfonic Acid SCHEMBL515772 0.89 TDP1 (0.43) TDP1KMT2AMEN1VNN1ATM
Trifluoromethanesulfonic Acid SCHEMBL31603622 0.89 TDP1 (0.43) TDP1KMT2AMEN1VNN1ATM
SCHEMBL3877031 0.84 PTPN1 (0.39) TDP1KMT2AMEN1ALDH1A1HPGD
SCHEMBL3879944 0.83 PTPN1 (0.38) TDP1KMT2AMEN1ALDH1A1HPGD
SCHEMBL3167925 0.82 TDP1 (0.56) TDP1KMT2AMEN1ATMALDH1A1
SCHEMBL2923123 0.79 CA2 (0.37) CA2MMP1MMP2MMP9MMP8
SCHEMBL2945652 0.78 CA2 (0.39) CA2MMP1MMP2MMP9MMP8
SCHEMBL7530996 0.78 CA2 (0.36) CA2MMP1MMP2MMP9MMP8
SCHEMBL482416 0.77 CA2 (0.35) TDP1KMT2AMEN1ALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9720322-B2 Photoresist composition, compound, and production method thereof JSR CORPORATION (JP) 2017-08-01 US disclosed
US-20160370700-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2016-12-22 US disclosed
US-9477149-B2 Photoresist composition, compound, and production method thereof JSR CORPORATION (JP) 2016-10-25 US disclosed
US-9261780-B2 Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound JSR CORPORATION (JP) 2016-02-16 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
US-9040221-B2 Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound JSR CORPORATION (JP) 2015-05-26 US disclosed
US-20150004545-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2015-01-01 US disclosed
US-20140255854-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-11 US disclosed
US-8758978-B2 Radiation-sensitive resin composition, resist pattern formation method, and polymer JSR CORPORATION (JP) 2014-06-24 US disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-20050095527-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-05-05 US disclosed
US-6838225-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-01-04 US disclosed
US-20040146802-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2004-07-29 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-20020132181-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-09-19 US disclosed
EP-1225480-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-07-24 EP disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160370700-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF RARA, H1-0, NR2E3 TDP1 4425/4885KMT2A 364/4885MEN1 1310/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.