Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL515772

O=C(Cc1cccc2ccccc12)C[S+]1CCCC1.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.43

Full drug profile on Sugi Atlas →

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.43
KMT2A Q03164 5/20 0.39
MEN1 O00255 3/20 0.39
VNN1 O95497 1/20 0.36
ATM Q13315 1/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
CA2 P00918 1/20 0.36
HPGD P15428 2/20 0.35
ALDH1A1 P00352 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
KDM4E B2RXH2 1/20 0.35
LMNA P02545 1/20 0.35
PTGER4 P35408 1/20 0.35
BCHE P06276 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL31603622 1.00 TDP1 (0.43) TDP1KMT2AMEN1VNN1ATM
SCHEMBL515371 0.89 TDP1 (0.39) TDP1KMT2AMEN1VNN1ATM
SCHEMBL515337 0.88 TDP1 (0.38) TDP1KMT2AMEN1VNN1ATM
SCHEMBL3167925 0.87 TDP1 (0.56) TDP1KMT2AMEN1ATML3MBTL1
Trifluoromethanesulfonic Acid SCHEMBL3872598 0.82 PTPN1 (0.43) TDP1KMT2AMEN1HPGDALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL29625806 0.82 PTPN1 (0.43) TDP1KMT2AMEN1HPGDALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL2945043 0.76
Trifluoromethanesulfonic Acid SCHEMBL926342 0.75 ALDH1A1 (0.43) TDP1KMT2AMEN1HPGDALDH1A1
Trifluoromethanesulfonic Acid SCHEMBL3096657 0.73 MAPT (0.37) TDP1KMT2AMEN1L3MBTL1CA2
Trifluoromethanesulfonic Acid SCHEMBL4187466 0.72 HSD17B10 (0.43) TDP1KMT2AMEN1HPGDALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 112 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024101411-A1 CURABLE COMPOSITION FOR ORGANIC EL ELEMENTS, CURED PRODUCT FOR ORGANIC EL ELEMENTS AND METHOD FOR PRODUCING SAME, ORGANIC EL ELEMENT, AND POLYMER JSR株式会社 2024-05-16 WO disclosed
US-9720322-B2 Photoresist composition, compound, and production method thereof JSR CORPORATION (JP) 2017-08-01 US disclosed
US-20160370700-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2016-12-22 US disclosed
US-9477149-B2 Photoresist composition, compound, and production method thereof JSR CORPORATION (JP) 2016-10-25 US disclosed
US-9261780-B2 Radiation-sensitive resin composition, method for forming resist pattern, and polymer and compound JSR CORPORATION (JP) 2016-02-16 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9170492-B2 Silicon-containing film-forming composition, silicon-containing film, and pattern forming method JSR CORPORATION (JP) 2015-10-27 US disclosed
US-9140985-B2 2015-09-22 US disclosed
US-9134611-B2 Composition for forming resist underlayer film and pattern-forming method JSR CORPORATION (JP) 2015-09-15 US disclosed
US-9126231-B2 Insulation pattern-forming method and insulation pattern-forming material JSR CORPORATION (JP) 2015-09-08 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-6322949-B2 SULFONIUM COMPOUND AS PHOTOACID GENERATOR JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-11-27 US disclosed
US-20010014427-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 2001-08-16 US disclosed
US-6242161-B1 ABSORPTION COATINGS USING COPOLYMERS JSR CORPORATION (JP) 2001-06-05 US disclosed
US-6187504-B1 PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION JSR CORPORATION (JP) 2001-02-13 US disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed
EP-0849634-A1 Radiation sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1998-06-24 EP disclosed
EP-0789278-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-08-13 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160370700-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF RARA, H1-0, NR2E3 TDP1 4425/4885KMT2A 364/4885MEN1 1310/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.