SCHEMBL515602

SCHEMBL515602

O=S(=O)(OS(c1ccccc1)(c1ccccc1)c1ccccc1)C(F)(F)CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.37

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
P2RX7 Q99572 6/20 0.37
KMT2A Q03164 4/20 0.36
NPC1 O15118 1/20 0.36
RAB9A P51151 1/20 0.36
SMN1; SMN2 Q16637 1/20 0.36
EPHX2 P34913 2/20 0.34
MEN1 O00255 2/20 0.34
CA9 Q16790 2/20 0.34
ENPP3 O14638 1/20 0.34
CA2 P00918 1/20 0.34
ENPP1 P22413 1/20 0.34
ENPP2 Q13822 1/20 0.34
ALDH1A1 P00352 1/20 0.34
GAA P10253 1/20 0.34
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33
CA12 O43570 1/20 0.32
SCN9A Q15858 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16594082 0.78 NPC1 (0.35) KMT2ANPC1RAB9ASMN1; SMN2EPHX2
SCHEMBL1398383 0.78 ALDH1A1 (0.48) KMT2ANPC1RAB9ASMN1; SMN2CA9
SCHEMBL961708 0.78 KMT2A (0.37) P2RX7KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL16330889 0.78 P2RX7 (0.36) P2RX7KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL16566543 0.73 CYP19A1 (0.40) P2RX7KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL501412 0.72 HSD11B1 (0.38) KMT2ASMN1; SMN2MEN1ALDH1A1
SCHEMBL17068035 0.72 ALDH1A1 (0.33) KMT2AMEN1CA9CA2ALDH1A1
SCHEMBL961481 0.72 ALDH1A1 (0.35) P2RX7KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL17063683 0.71 SCN9A (0.38) P2RX7KMT2ANPC1RAB9ASMN1; SMN2
SCHEMBL1398376 0.71 ALDH1A1 (0.42) KMT2ANPC1RAB9ASMN1; SMN2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 101 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2026-02-24 US disclosed
US-12386260-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound JSR CORPORATION (JP) 2025-08-12 US disclosed
US-20220299873-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2022-09-22 US disclosed
US-20220229367-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND JSR CORPORATION (JP) 2022-07-21 US disclosed
US-20210181627-A1 PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2021-06-17 US disclosed
US-20210063872-A1 PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2021-03-04 US disclosed
EP-3229075-B1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR CORP (JP) 2021-01-06 EP disclosed
US-20200387068-A1 RADIATION-SENSITIVE COMPOSITION, PATTERN-FORMING METHOD AND COMPOUND JSR CORPORATION (JP) 2020-12-10 US disclosed
US-20200333707-A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2020-10-22 US disclosed
US-10725376-B2 Pattern-forming method JSR CORPORATION (JP) 2020-07-28 US disclosed
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-14 US disclosed
EP-2444845-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2012-04-25 EP disclosed
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120082935-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FORMED USING THE SAME JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120082936-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2012-04-05 US disclosed
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND JSR CORPORATION (JP) 2012-02-02 US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
EP-1873143-B1 A salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL CO (JP) 2009-04-15 EP disclosed
EP-1873143-A1 A salt suitable for an acid generator and a chemically amplified resist composition containing the same Sumitomo Chemical Company, Limited (JP) 2008-01-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120148952-A1 RADIATION-SENSITIVE RESIN COMPOSITION AND COMPOUND RAD1, RER1, RPA1 P2RX7 2884/4885KMT2A 820/4885NPC1 4184/4885
US-20120082934-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND COMPOUND RER1, RFT1, RAD51 P2RX7 2086/4885KMT2A 2095/4885NPC1 2168/4885
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION AFF1, RER1, AFF4 P2RX7 3746/4885KMT2A 683/4885NPC1 253/4885
US-20120028189-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND RER1, RAD51, TERB1 P2RX7 1418/4885KMT2A 1051/4885NPC1 4128/4885
US-20210181627-A1 PATTERN-FORMING METHOD AND RADIATION-SENSITIVE COMPOSITION RIF1, AP3M1, MRE11 P2RX7 4716/4885KMT2A 1063/4885NPC1 3359/4885
US-12560866-B2 Radiation-sensitive resin composition, method of forming resist pattern, polymer, and compound RAD51, RER1, RAD1 P2RX7 2829/4885KMT2A 2433/4885NPC1 1790/4885
US-20220299873-A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND RER1, RAD51, RFT1 P2RX7 2848/4885KMT2A 1452/4885NPC1 2731/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.