Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 4/20 | 0.37 |
| ▸ | NPC1 | O15118 | 1/20 | 0.37 |
| ▸ | RAB9A | P51151 | 1/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.37 |
| ▸ | P2RX7 | Q99572 | 5/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.37 |
| ▸ | GAA | P10253 | 1/20 | 0.37 |
| ▸ | SCN9A | Q15858 | 2/20 | 0.37 |
| ▸ | MEN1 | O00255 | 2/20 | 0.35 |
| ▸ | ENPP3 | O14638 | 1/20 | 0.35 |
| ▸ | CA2 | P00918 | 1/20 | 0.35 |
| ▸ | ENPP1 | P22413 | 1/20 | 0.35 |
| ▸ | ENPP2 | Q13822 | 1/20 | 0.35 |
| ▸ | CA9 | Q16790 | 1/20 | 0.35 |
| ▸ | FABP4 | P15090 | 1/20 | 0.35 |
| ▸ | FABP5 | Q01469 | 1/20 | 0.35 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.34 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL961481 | 0.92 | ALDH1A1 (0.35) | KMT2ANPC1RAB9ASMN1; SMN2P2RX7 | |
| SCHEMBL15659577 | 0.90 | SCN9A (0.38) | KMT2ANPC1RAB9ASMN1; SMN2P2RX7 | |
| SCHEMBL17063683 | 0.90 | SCN9A (0.38) | KMT2ANPC1RAB9ASMN1; SMN2P2RX7 | |
| SCHEMBL14778377 | 0.83 | SCN9A (0.36) | NPC1RAB9AALDH1A1GAASCN9A | |
| SCHEMBL16566543 | 0.82 | CYP19A1 (0.40) | KMT2ANPC1RAB9ASMN1; SMN2P2RX7 | |
| SCHEMBL26191695 | 0.79 | EPHX2 (0.41) | KMT2AP2RX7ALDH1A1MEN1EPHX2 | |
| SCHEMBL546525 | 0.79 | KMT2A (0.34) | KMT2ANPC1RAB9ASMN1; SMN2ALDH1A1 | |
| SCHEMBL515602 | 0.78 | P2RX7 (0.37) | KMT2ANPC1RAB9ASMN1; SMN2P2RX7 | |
| SCHEMBL1079673 | 0.78 | P2RX7 (0.39) | KMT2ANPC1RAB9ASMN1; SMN2P2RX7 | |
| SCHEMBL10150823 | 0.78 | P2RX7 (0.38) | KMT2AP2RX7ALDH1A1SCN9AMEN1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 74 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9354523-B2 | Composition for resist pattern-refinement, and fine pattern-forming method | JSR CORPORATION (JP) | 2016-05-31 | — | — | US | disclosed |
| US-20160011513-A1 | COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| EP-2244124-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-26 | — | — | EP | disclosed |
| EP-2244126-B1 | Patterning process | SHINETSU CHEMICAL CO (JP) | 2015-08-19 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| US-8968979-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-03 | — | — | US | disclosed |
| EP-2267533-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-22 | — | — | EP | disclosed |
| EP-2244125-B1 | Resist composition | SHINETSU CHEMICAL CO (JP) | 2014-10-08 | — | — | EP | disclosed |
| EP-2146245-B1 | Resist composition and patterning process | SHINETSU CHEMICAL CO (JP) | 2014-06-25 | — | — | EP | disclosed |
| US-8592133-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-11-26 | — | — | US | disclosed |
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-27 | — | — | US | disclosed |
| US-7301047-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-11-27 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-7232642-B2 | Chemically amplified positive resist composition, a haloester derivative and a process for producing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-06-19 | — | — | US | disclosed |
| US-20070100159-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20060160017-A1 | Chemically amplified positive resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2006-07-20 | — | — | US | disclosed |
| US-20060014913-A1 | Star polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2006-01-19 | — | — | US | disclosed |
| US-20050266351-A1 | Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2005-12-01 | — | — | US | disclosed |
| US-20050260525-A1 | Chemically amplified positive resist composition, a haloester derivative and a process for producing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-11-24 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20070298352-A1 | NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS | HCN3, ASIC3, TST | KMT2A 83/4885NPC1 4804/4885RAB9A 3784/4885 |
| US-20070100159-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN1, HCN3, HCN2 | KMT2A 1692/4885NPC1 2194/4885RAB9A 2630/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.