SCHEMBL515864

SCHEMBL515864

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.Oc1ccc([S+]2CCCC2)c2ccccc12

nearest known ligand 0.35

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA1 P00915 14/20 0.35
CA2 P00918 14/20 0.35
LDHA P00338 1/20 0.32
MMP1 P03956 1/20 0.31
MMP2 P08253 1/20 0.31
MMP9 P14780 1/20 0.31
MMP8 P22894 1/20 0.31
MMP13 P45452 1/20 0.31
IDO1 P14902 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL516312 0.99 CA1 (0.34) CA1CA2LDHAIDO1
Trifluoromethanesulfonic Acid SCHEMBL515598 0.86 LDHA (0.37) LDHAIDO1
Trifluoromethanesulfonic Acid SCHEMBL31168280 0.86 LDHA (0.37) LDHAIDO1
SCHEMBL4995336 0.86 ALDH1A1 (0.36) CA1CA2
SCHEMBL704509 0.83 ALDH1A1 (0.33) IDO1
SCHEMBL702251 0.82 ALDH1A1 (0.33) IDO1
SCHEMBL5366389 0.81 CA1 (0.30) CA1CA2
SCHEMBL3167580 0.81
SCHEMBL3168087 0.81 HTT (0.32)
SCHEMBL704517 0.81 TSHR (0.41)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9720322-B2 Photoresist composition, compound, and production method thereof JSR CORPORATION (JP) 2017-08-01 US disclosed
US-9598520-B2 Radiation-sensitive resin composition, polymer and method for forming a resist pattern JSR CORPORATION (JP) 2017-03-21 US disclosed
US-20160370700-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2016-12-22 US disclosed
US-9477149-B2 Photoresist composition, compound, and production method thereof JSR CORPORATION (JP) 2016-10-25 US disclosed
US-9229323-B2 Pattern-forming method JSR CORPORATION (JP) 2016-01-05 US disclosed
US-9046765-B2 Resist pattern-forming method, resist pattern-forming radiation-sensitive resin composition, and resist film JSR CORPORATION (JP) 2015-06-02 US disclosed
EP-2503392-B1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2015-04-15 EP disclosed
US-20150004545-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF JSR CORPORATION (JP) 2015-01-01 US disclosed
US-20140255854-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-09-11 US disclosed
US-8758978-B2 Radiation-sensitive resin composition, resist pattern formation method, and polymer JSR CORPORATION (JP) 2014-06-24 US disclosed
US-20030219680-A1 Photoresists useful for microfabrication utilizing deep ultraviolet rays such as an excimer laser, x-rays such as synchrotron radiation, and electron beams JSR CORPORATION (JP) 2003-11-27 US disclosed
US-20030203309-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030203307-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-30 US disclosed
US-20030157423-A1 Copolymer, polymer mixture, and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-08-21 US disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
US-20020132181-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-09-19 US disclosed
EP-1225480-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-07-24 EP disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160370700-A1 PHOTORESIST COMPOSITION, COMPOUND, AND PRODUCTION METHOD THEREOF RARA, H1-0, NR2E3 CA1 126/4885CA2 205/4885LDHA 515/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.