Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.33 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | P2RX7 | Q99572 | 1/20 | 0.31 |
| ▸ | DRD2 | P14416 | 1/20 | 0.30 |
| ▸ | SIRT1 | Q96EB6 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5357435 | 0.98 | ALDH1A1 (0.34) | ALDH1A1NPSR1HPGDDRD2SIRT1 | |
| SCHEMBL5349509 | 0.80 | ALDH1A1 (0.34) | ALDH1A1NPSR1HPGD | |
| SCHEMBL5357625 | 0.78 | ALDH1A1 (0.33) | ALDH1A1NPSR1 | |
| SCHEMBL11587461 | 0.75 | TDP1 (0.38) | ALDH1A1P2RX7DRD2 | |
| SCHEMBL15356291 | 0.74 | TP53 (0.41) | ALDH1A1DRD2 | |
| SCHEMBL1839819 | 0.74 | TP53 (0.45) | ALDH1A1HPGDDRD2 | |
| SCHEMBL15356269 | 0.72 | ALDH1A1 (0.39) | ALDH1A1HPGDDRD2 | |
| SCHEMBL15356277 | 0.72 | ALDH1A1 (0.39) | ALDH1A1HPGDDRD2 | |
| SCHEMBL1897257 | 0.72 | ALDH1A1 (0.39) | ALDH1A1HPGDDRD2 | |
| SCHEMBL13672476 | 0.72 | DRD2 (0.44) | DRD2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110526841-B | Onium salt, chemically amplified positive resist composition, and resist pattern forming method | 信越化学工业株式会社 | 2023-06-13 | — | — | CN | disclosed |
| US-11036136-B2 | Onium salt, chemically amplified positive resist composition, and resist pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-15 | — | — | US | disclosed |
| EP-3572877-B1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | SHINETSU CHEMICAL CO (JP) | 2020-09-09 | — | — | EP | disclosed |
| EP-3572877-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST PATTERN FORMING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2019-11-27 | — | — | EP | disclosed |
| US-9846360-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-12-19 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9568821-B2 | Patterning process | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-02-14 | — | — | US | disclosed |
| US-9568821-B2 | Patterning process | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2017-02-14 | — | — | US | disclosed |
| US-20170003590-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20160363866-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-15 | — | — | US | disclosed |
| US-20140065546-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-06 | — | — | US | disclosed |
| US-20140065546-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-06 | — | — | US | disclosed |
| US-7312014-B2 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2007-12-25 | — | — | US | disclosed |
| US-7202016-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2007-04-10 | — | — | US | disclosed |
| US-20050214680-A1 | Radiation-sensitive resin composition | MIYAJI MASAAKI | 2005-09-29 | — | — | US | disclosed |
| US-6933094-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-08-23 | — | — | US | disclosed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | disclosed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11036136-B2 | Onium salt, chemically amplified positive resist composition, and resist pattern forming process | SLC6A5, SLC6A9, POLL | ALDH1A1 4646/4885NPSR1 1413/4885HPGD 4360/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.