SCHEMBL5355933

SCHEMBL5355933

C=C(CCO)C(=O)C(=C)CCO

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
CAMK2A Q9UQM7 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16661 0.78
SCHEMBL7758820 0.78 TET2 (0.40) CAMK2A
SCHEMBL3775245 0.77 KDM4E (0.30)
SCHEMBL4532573 0.75 TET2 (0.39) CAMK2A
Ethylene SCHEMBL7184477 0.75 TET2 (0.39) CAMK2A
SCHEMBL10713423 0.75
SCHEMBL35589 0.75
SCHEMBL29150247 0.75
SCHEMBL30849720 0.75
SCHEMBL5698428 0.73 GRIK1 (0.41) CAMK2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110028670-A Low-dielectric loss negative light-sensitive poly amic acid ester resin, resin combination, preparation method and application 明士新材料有限公司 2019-07-19 CN claimed
CN-110028669-A Negative photosensitive poly amic acid ester resin, resin combination, preparation method and application 明士新材料有限公司 2019-07-19 CN claimed
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-04-28 US disclosed
US-20260036904-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN, AND SEMICONDUCTOR DEVICE ASAHI KASEI KABUSHIKI KAISHA (JP) 2026-02-05 US disclosed
US-20250341778-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING POLYIMIDE AND CURED RELIEF PATTERN USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-11-06 US disclosed
US-12386259-B2 Negative-type photosensitive resin composition and method for producing polyimide and cured relief pattern using same ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-08-12 US disclosed
WO-2024148707-A1 POLYIMIDE PRECURSOR AND SYNTHETIC METHOD THEREFOR, AND PHOTOSENSITIVE RESIN COMPOSITION COMPRISING POLYIMIDE PRECURSOR 深圳先进电子材料国际创新研究院 2024-07-18 WO disclosed
US-20240101761-A1 POLYIMIDE PRECURSOR RESIN COMPOSITION AND METHOD FOR MANUFACTURING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-03-28 US disclosed
US-20230221639-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2023-07-13 US disclosed
US-11640112-B2 Photosensitive resin composition and method for producing cured relief pattern ASAHI KASEI KABUSHIKI KAISHA (JP) 2023-05-02 US disclosed
CN-115755526-A Photosensitive resin composition and method for producing cured relief pattern 旭化成株式会社 2023-03-07 CN disclosed
US-20210294213-A1 NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING POLYIMIDE AND CURED RELIEF PATTERN USING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2021-09-23 US disclosed
CN-110028670-A Low-dielectric loss negative light-sensitive poly amic acid ester resin, resin combination, preparation method and application 明士新材料有限公司 2019-07-19 CN disclosed
CN-110028669-A Negative photosensitive poly amic acid ester resin, resin combination, preparation method and application 明士新材料有限公司 2019-07-19 CN disclosed
US-20180373147-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PRODUCING CURED RELIEF PATTERN ASAHI KASEI KABUSHIKI KAISHA (JP) 2018-12-27 US disclosed
CN-106104381-A Photosensitive resin composition, method for producing cured relief pattern, and semiconductor device 旭化成株式会社 2016-11-09 CN disclosed
CN-104285184-A Negative photosensitive resin composition, method for producing cured relief pattern, and semiconductor device ASAHI KASEI E MATERIALS CORP 2015-01-14 CN disclosed
US-7282323-B2 Highly heat-resistant, negative-type photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2007-10-16 US disclosed
US-20050244739-A1 Highly heat-resistant, negative-type photosensitive resin composition ASAHI KASEI EMD CORPORATION (JP) 2005-11-03 US disclosed
EP-1536286-A1 HIGHLY HEAT-RESISTANT, NEGATIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION Asahi Kasei EMD Corporation (JP) 2005-06-01 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12613465-B2 Photosensitive resin composition and method for producing cured relief pattern ARCN1, GLRA1, PSMA1 CAMK2A 2375/4885
US-20260036904-A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING CURED RELIEF PATTERN, AND SEMICONDUCTOR DEVICE RER1, ASIC1, FRG1 CAMK2A 2837/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.