SCHEMBL5369764

SCHEMBL5369764

O=C(OCCCCCCCCO)C(F)(F)S(=O)(=O)O

nearest known ligand 0.38

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.38
L3MBTL1 Q9Y468 1/20 0.38
ACHE P22303 6/20 0.37
CYP4F2 P78329 3/20 0.35
CYP4A11 Q02928 3/20 0.35
GAA P10253 1/20 0.32
TDP1 Q9NUW8 1/20 0.32
ATR Q13535 1/20 0.31
APP P05067 2/20 0.31
CYP3A4 P08684 1/20 0.31
TSHR P16473 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10225081 1.00 ALDH1A1 (0.38) ALDH1A1L3MBTL1ACHECYP4F2CYP4A11
SCHEMBL12135625 0.98 ALDH1A1 (0.39) ALDH1A1L3MBTL1ACHECYP4F2CYP4A11
SCHEMBL12135643 0.93 ALDH1A1 (0.40) ALDH1A1L3MBTL1CYP4F2CYP4A11ATR
SCHEMBL12135431 0.86 CYP4F2 (0.36) ALDH1A1L3MBTL1CYP4F2CYP4A11GAA
SCHEMBL2734349 0.85 ALDH1A1 (0.43) ALDH1A1L3MBTL1TSHR
SCHEMBL13705955 0.84 NAAA (0.47) ALDH1A1TSHR
SCHEMBL107247 0.84 NAAA (0.47) ALDH1A1TSHR
SCHEMBL4340503 0.84 ALDH1A1 (0.36) ALDH1A1L3MBTL1
SCHEMBL13705963 0.84 NAAA (0.47) ALDH1A1TSHR
SCHEMBL13705962 0.84 NAAA (0.47) ALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8378016-B2 Chemically amplified positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-02-19 US disclosed
US-8062829-B2 Chemically amplified resist composition and chemically amplified resist composition for immersion lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-11-22 US disclosed
US-7803513-B2 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-09-28 US disclosed
US-7741007-B2 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-22 US disclosed
US-20090220890-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND CHEMICALLY AMPLIFIED RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-09-03 US disclosed
US-7575850-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-08-18 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080248423-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-7262321-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-28 US disclosed
US-7262321-B2 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-08-28 US disclosed
US-20070149702-A1 Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-06-28 US disclosed
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-05-03 US disclosed
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED 2007-05-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070100096-A1 Salt suitable for an acid generator and a chemically amplified resist composition containing the same KCNH3, KCNN4, NHERF1 ALDH1A1 1196/4885L3MBTL1 4826/4885ACHE 4857/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.