SCHEMBL5404826

SCHEMBL5404826

CC(C)(C)c1ccc(S(OS(=O)(=O)c2cccc([N+](=O)[O-])c2)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 3/20 0.49
GAA P10253 1/20 0.49
HTT P42858 1/20 0.49
CA2 P00918 2/20 0.47
CA5A P35218 1/20 0.47
ALDH1A1 P00352 3/20 0.45
F2 P00734 2/20 0.45
PRSS1 P07477 2/20 0.45
PRSS2 P07478 2/20 0.45
PRSS3 P35030 2/20 0.45
MEN1 O00255 2/20 0.45
LMNA P02545 2/20 0.45
SMN1; SMN2 Q16637 2/20 0.45
PRMT5 O14744 1/20 0.45
WDR77 Q9BQA1 1/20 0.45
NPC1 O15118 1/20 0.45
MAPT P10636 1/20 0.45
NFKB1 P19838 1/20 0.45
RAB9A P51151 1/20 0.45
NFKB2 Q00653 1/20 0.45

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5409063 0.91 KMT2A (0.40) KMT2AGAAHTTCA2CA5A
SCHEMBL5412248 0.86 KMT2A (0.53) KMT2AGAAHTTCA2CA5A
SCHEMBL451539 0.82 HSD11B1 (0.53) KMT2AGAACA2ALDH1A1MEN1
SCHEMBL2634260 0.82 HSD11B1 (0.53) KMT2AGAACA2ALDH1A1MEN1
SCHEMBL5408956 0.80 KMT2A (0.46) KMT2AGAAHTTCA2CA5A
SCHEMBL5415249 0.80 CA1 (0.43) KMT2AGAAHTTCA2ALDH1A1
SCHEMBL5410028 0.79 KMT2A (0.48) KMT2AGAAHTTCA2CA5A
SCHEMBL5408367 0.79 KMT2A (0.48) KMT2AGAAHTTCA2CA5A
SCHEMBL3140903 0.77 HSD11B1 (0.48) KMT2AGAAHTTALDH1A1MEN1
SCHEMBL452980 0.77 HSD11B1 (0.48) KMT2AGAAHTTALDH1A1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed