SCHEMBL5405429

SCHEMBL5405429

Cc1ccc(-c2cccc(S)c2-c2ccc(C)cc2)cc1.O=S(=O)(O)c1cc(C(F)(F)F)cc(C(F)(F)F)c1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM1A O60341 1/20 0.38
FFAR1 O14842 1/20 0.38
CDK1 P06493 1/20 0.38
CCNB1 P14635 1/20 0.38
CCNA2 P20248 1/20 0.38
CDK2 P24941 1/20 0.38
CDK7 P50613 1/20 0.38
CCNH P51946 1/20 0.38
CCNA1 P78396 1/20 0.38
FFAR4 Q5NUL3 1/20 0.38
IDH2 P48735 1/20 0.38
ENPP1 P22413 1/20 0.38
PTGS2 P35354 3/20 0.36
ACLY P53396 2/20 0.36
POLB P06746 2/20 0.36
RECQL P46063 1/20 0.36
PTGS1 P23219 1/20 0.36
RXRA P19793 1/20 0.35
RXRB P28702 1/20 0.35
MEN1 O00255 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5408441 0.92 FFAR1 (0.43) KDM1AFFAR1CDK1CCNB1CCNA2
SCHEMBL3132925 0.89 ALDH1A1 (0.42) KDM1AFFAR1CDK1CCNB1CCNA2
SCHEMBL3143584 0.89 ALDH1A1 (0.42) KDM1AFFAR1CDK1CCNB1CCNA2
SCHEMBL3144542 0.85 LMNA (0.44) PTGS2POLBPTGS1MEN1LMNA
Trifluoromethanesulfonic Acid SCHEMBL1088677 0.83 ENPP1 (0.43) KDM1AIDH2ENPP1PTGS2POLB
SCHEMBL3139786 0.82 MEN1 (0.43) PTGS2PTGS1MEN1LMNAMAPT
SCHEMBL3140909 0.82 LMNA (0.42) PTGS2PTGS1LMNATP53MAPT
SCHEMBL3137420 0.81 PTGS2 (0.44) PTGS2PTGS1MEN1LMNAMAPT
SCHEMBL3135090 0.80 LMNA (0.45) PTGS2POLBPTGS1MEN1LMNA
SCHEMBL3134809 0.80 MMP2 (0.40) PTGS2POLBMEN1LMNATP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed