SCHEMBL5408441

SCHEMBL5408441

Cc1ccc(-c2cccc(S)c2-c2ccc(C)cc2)cc1.O=S(=O)(O)c1cccc(C(F)(F)F)c1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
FFAR1 O14842 1/20 0.43
CDK1 P06493 1/20 0.43
CCNB1 P14635 1/20 0.43
CCNA2 P20248 1/20 0.43
CDK2 P24941 1/20 0.43
CDK7 P50613 1/20 0.43
CCNH P51946 1/20 0.43
CCNA1 P78396 1/20 0.43
FFAR4 Q5NUL3 1/20 0.43
CA1 P00915 1/20 0.42
CA2 P00918 1/20 0.42
MMP1 P03956 1/20 0.42
MMP2 P08253 1/20 0.42
MMP9 P14780 1/20 0.42
MMP8 P22894 1/20 0.42
MMP13 P45452 1/20 0.42
POLB P06746 2/20 0.41
RECQL P46063 1/20 0.41
IDH2 P48735 1/20 0.41
NPSR1 Q6W5P4 2/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5405429 0.92 KDM1A (0.38) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL3143584 0.88 ALDH1A1 (0.42) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL3132925 0.88 ALDH1A1 (0.42) FFAR1CDK1CCNB1CCNA2CDK2
SCHEMBL3144542 0.84 LMNA (0.44) CA1CA2MMP2MMP9POLB
Trifluoromethanesulfonic Acid SCHEMBL1088677 0.82 ENPP1 (0.43) MMP2MMP9POLBIDH2MEN1
SCHEMBL3139786 0.81 MEN1 (0.43) MMP1MMP2MMP9MMP13MAPT
SCHEMBL3140909 0.81 LMNA (0.42) MMP2MMP9NPSR1HSD17B2MAPT
SCHEMBL3137420 0.81 PTGS2 (0.44) MAPTMEN1KMT2ALMNAHTT
SCHEMBL3135090 0.79 LMNA (0.45) CA2MMP2MMP9POLBMAPT
SCHEMBL3134809 0.79 MMP2 (0.40) MMP1MMP2MMP9MMP13POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed