Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | PPARG | P37231 | 1/20 | 0.40 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.40 |
| ▸ | ENPP2 | Q13822 | 3/20 | 0.39 |
| ▸ | HTT | P42858 | 3/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.39 |
| ▸ | MEN1 | O00255 | 4/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.38 |
| ▸ | CA12 | O43570 | 2/20 | 0.37 |
| ▸ | CA2 | P00918 | 2/20 | 0.37 |
| ▸ | MAPT | P10636 | 2/20 | 0.37 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.37 |
| ▸ | HPGD | P15428 | 1/20 | 0.37 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.37 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.37 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.37 |
| ▸ | RECQL | P46063 | 1/20 | 0.37 |
| ▸ | ENPP3 | O14638 | 2/20 | 0.37 |
| ▸ | ENPP1 | P22413 | 2/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5709654 | 0.95 | MEN1 (0.41) | ALDH1A1LMNAPPARGTDP1ENPP2 | |
| SCHEMBL65269 | 0.93 | HTT (0.44) | ALDH1A1LMNAPPARGTDP1HTT | |
| SCHEMBL64769 | 0.93 | HTT (0.44) | ALDH1A1LMNAPPARGTDP1HTT | |
| SCHEMBL5709631 | 0.91 | TDP1 (0.46) | ALDH1A1LMNAPPARGTDP1ENPP2 | |
| SCHEMBL6741021 | 0.90 | MEN1 (0.47) | ALDH1A1LMNATDP1ENPP2HTT | |
| SCHEMBL382761 | 0.90 | TDP1 (0.47) | ALDH1A1LMNAPPARGTDP1ENPP2 | |
| SCHEMBL5171833 | 0.88 | ALDH1A1 (0.50) | ALDH1A1LMNAPPARGTDP1ENPP2 | |
| SCHEMBL547500 | 0.87 | TDP1 (0.50) | ALDH1A1LMNAPPARGTDP1ENPP2 | |
| SCHEMBL64967 | 0.87 | HTT (0.40) | ALDH1A1LMNATDP1HTTSMN1; SMN2 | |
| SCHEMBL6745165 | 0.86 | KMT2A (0.44) | ALDH1A1LMNATDP1ENPP2HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 207 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11884839-B2 | Acetal-protected silanol group-containing polysiloxane composition | NISSAN CHEMICAL CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-04-27 | — | — | US | disclosed |
| US-11561472-B2 | Radiation sensitive composition | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2023-01-24 | — | — | US | disclosed |
| EP-3309614-B1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL CORP (JP) | 2021-11-10 | — | — | EP | disclosed |
| US-20190185707-A1 | ACETAL-PROTECTED SILANOL GROUP-CONTAINING POLYSILOXANE COMPOSITION | NISSAN CHEMICAL CORPORATION (JP) | 2019-06-20 | — | — | US | disclosed |
| US-20180181000-A1 | RADIATION SENSITIVE COMPOSITION | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2018-06-28 | — | — | US | disclosed |
| EP-3309614-A1 | RADIATION SENSITIVE COMPOSITION | Nissan Chemical Industries, Ltd. (JP) | 2018-04-18 | — | — | EP | disclosed |
| EP-2000851-B1 | Photomask blank, resist pattern forming process, and photomask preparation process | SHINETSU CHEMICAL CO (JP) | 2015-07-29 | — | — | EP | disclosed |
| EP-2103592-B1 | Hydroxyl-containing monomer, polymer, resist composition, and patterning process | SHINETSU CHEMICAL CO (JP) | 2015-06-03 | — | — | EP | disclosed |
| US-9023582-B2 | Photosensitive polymer, resist composition including the photosensitive polymer and method of preparing resist pattern using the resist composition | SAMSUNG DISPLAY CO., LTD. (KR) | 2015-05-05 | — | — | US | disclosed |
| US-20040167322-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-08-26 | — | — | US | disclosed |
| US-6713612-B2 | Sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-03-30 | — | — | US | disclosed |
| US-20040033432-A1 | Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-19 | — | — | US | disclosed |
| US-20040033440-A1 | Photoacid generators, chemically amplified positive resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-19 | — | — | US | disclosed |
| US-6689530-B2 | ULTRAVIOLET LITHOGRAPHY MICROFABRICATION WITH IMPROVED RESOLUTION AND PATTERN PROFILE AFTER DEVELOPMENT | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-02-10 | — | — | US | disclosed |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-12-04 | — | — | US | disclosed |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-11-20 | — | — | US | disclosed |
| US-20030180653-A1 | Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-25 | — | — | US | disclosed |
| US-6440634-B1 | MICROFABRICATION OF INTEGRATED CIRCUITS, DEEP UV LITHOGRAPHY; PHENYLSULFONATE SALTS OF SULFONIUM OR IODINIUM CATIONS | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2002-08-27 | — | — | US | disclosed |
| EP-1077391-A1 | Onium salts, photoacid generators for resist compositions, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-02-21 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20040033432-A1 | Novel sulfonydiazomethanes, photoacid generators, resist compositions, and patterning process | POLL, PIM3, VEGFA | ALDH1A1 3337/4885LMNA 1744/4885PPARG 535/4885 |
| US-20030224298-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | VEGFA, DNMT3A, PIM3 | ALDH1A1 3469/4885LMNA 815/4885PPARG 418/4885 |
| US-11561472-B2 | Radiation sensitive composition | RER1, RAD1, RAD51 | ALDH1A1 2201/4885LMNA 211/4885PPARG 3857/4885 |
| US-20030215738-A1 | Photoacid generators, chemically amplified resist compositions, and patterning process | CCNH, PAH, POLH | ALDH1A1 1126/4885LMNA 2395/4885PPARG 375/4885 |
| US-20030180653-A1 | Novel sulfonyldiazomethanes, photoacid generations, resist compositions, and patterning process | CACNA1A, KCNA1, POLL | ALDH1A1 893/4885LMNA 2767/4885PPARG 1186/4885 |
| US-20040167322-A1 | Novel sulfonyldiazomethanes, photoacid generators, resist compositions, and patterning process | POLL, VEGFA, PIM3 | ALDH1A1 2935/4885LMNA 535/4885PPARG 672/4885 |
| US-20180181000-A1 | RADIATION SENSITIVE COMPOSITION | RER1, RAD1, RAD51 | ALDH1A1 1670/4885LMNA 247/4885PPARG 3663/4885 |
| US-20230125270-A1 | RADIATION SENSITIVE COMPOSITION | XRCC6, RAD50, XRCC5 | ALDH1A1 1388/4885LMNA 1043/4885PPARG 2382/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.