Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NQO2 | P16083 | 1/20 | 0.55 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.48 |
| ▸ | KDM4E | B2RXH2 | 2/20 | 0.48 |
| ▸ | MEN1 | O00255 | 2/20 | 0.48 |
| ▸ | HPGD | P15428 | 2/20 | 0.48 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.48 |
| ▸ | MAPT | P10636 | 1/20 | 0.48 |
| ▸ | MPI | P34949 | 1/20 | 0.48 |
| ▸ | CDC25B | P30305 | 3/20 | 0.45 |
| ▸ | F2 | P00734 | 2/20 | 0.43 |
| ▸ | PRSS1 | P07477 | 2/20 | 0.43 |
| ▸ | PRSS2 | P07478 | 2/20 | 0.43 |
| ▸ | PRSS3 | P35030 | 2/20 | 0.43 |
| ▸ | CA1 | P00915 | 1/20 | 0.42 |
| ▸ | CA2 | P00918 | 1/20 | 0.42 |
| ▸ | CA9 | Q16790 | 1/20 | 0.42 |
| ▸ | TRPM4 | Q8TD43 | 1/20 | 0.42 |
| ▸ | ALPL | P05186 | 1/20 | 0.41 |
| ▸ | ALPI | P09923 | 1/20 | 0.41 |
| ▸ | ALPG | P10696 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29965723 | 1.00 | NQO2 (0.55) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| SCHEMBL669147 | 0.88 | NQO2 (0.55) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| SCHEMBL7859087 | 0.86 | NQO2 (0.53) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| Ammonia Solution, Strong SCHEMBL7523204 | 0.86 | NQO2 (0.53) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| SCHEMBL29469876 | 0.85 | NQO2 (0.62) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| SCHEMBL10817165 | 0.85 | NQO2 (0.62) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| SCHEMBL7859084 | 0.83 | NQO2 (0.50) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| SCHEMBL8912145 | 0.77 | GAA (0.52) | NQO2ALDH1A1KDM4EL3MBTL1 | |
| SCHEMBL27464496 | 0.77 | ALDH1A1 (0.44) | NQO2ALDH1A1KDM4EMEN1HPGD | |
| Sulfuric Acid SCHEMBL10415586 | 0.76 | NQO2 (0.80) | NQO2ALDH1A1KDM4EMEN1HPGD |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 111 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250362597-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-11-27 | — | — | US | disclosed |
| US-20250321485-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2025-10-16 | — | — | US | disclosed |
| US-20240369924-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| US-20240369925-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2024-11-07 | — | — | US | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| WO-2023008355-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-06-21 | — | — | US | disclosed |
| US-8198007-B2 | Negative-working resist composition and pattern forming method using the same | DAI NIPPON PRINTING CO., LTD. (JP) | 2012-06-12 | — | — | US | disclosed |
| US-8110334-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2012-02-07 | — | — | US | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20100266952-A1 | CYCLIC COMPOUND, PHOTORESIST BASE, PHOTORESIST COMPOSITION, MICROFABRICATION PROCESS, AND SEMICONDUCTOR DEVICE | IDEMITSU KOSAN CO., LTD. (JP) | 2010-10-21 | — | — | US | disclosed |
| US-20100239980-A1 | NEGATIVE-WORKING RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | DAI NIPPON PRINTING CO., LTD. (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | NQO2 3077/4885ALDH1A1 3830/4885KDM4E 3079/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | NQO2 1395/4885ALDH1A1 1540/4885KDM4E 821/4885 |
| US-20120156615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | NQO2 2748/4885ALDH1A1 1357/4885KDM4E 3656/4885 |
| US-20100266952-A1 | CYCLIC COMPOUND, PHOTORESIST BASE, PHOTORESIST COMPOSITION, MICROFABRICATION PROCESS, AND SEMICONDUCTOR DEVICE | C1S, CCNL2, CCNT1 | NQO2 4463/4885ALDH1A1 2673/4885KDM4E 1401/4885 |
| US-20120171615-A1 | CYCLIC COMPOUND, PROCESS FOR PRODUCTION OF THE CYCLIC COMPOUND, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, CCNE1, CCNA1 | NQO2 2748/4885ALDH1A1 1357/4885KDM4E 3656/4885 |
| US-20120164576-A1 | CYCLIC COMPOUND, PROCESS FOR PREPARATION THEREOF, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMATION OF RESIST PATTERN | RAD1, RER1, REV1 | NQO2 3270/4885ALDH1A1 1204/4885KDM4E 3683/4885 |
| US-20120164575-A1 | CYCLIC COMPOUND, MANUFACTURING METHOD THEREFOR, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESIST PATTERN | WEE1, SLC11A2, RAD1 | NQO2 3727/4885ALDH1A1 816/4885KDM4E 3251/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.