SCHEMBL5477402

SCHEMBL5477402

COc1ccc([I+](OS(=O)(=O)C(F)(F)F)c2ccc(OC)cc2)cc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PKM P14618 3/20 0.41
CA1 P00915 5/20 0.39
CA2 P00918 5/20 0.39
CA9 Q16790 2/20 0.39
HSD11B1 P28845 1/20 0.39
CA12 O43570 1/20 0.38
CA7 P43166 1/20 0.38
CA14 Q9ULX7 1/20 0.38
NOX4 Q9NPH5 1/20 0.36
TDP1 Q9NUW8 2/20 0.36
MAPK1 P28482 1/20 0.36
GAA P10253 2/20 0.36
KMT2A Q03164 1/20 0.36
PTGS1 P23219 2/20 0.36
PTGS2 P35354 2/20 0.36
FFAR4 Q5NUL3 1/20 0.36
SLC22A12 Q96S37 1/20 0.36
MMP2 P08253 2/20 0.36
MMP1 P03956 1/20 0.36
MMP9 P14780 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL361657 0.95 KMT2A (0.40) PKMCA1CA2CA9HSD11B1
SCHEMBL2898700 0.82 CA2 (0.39) CA1CA2CA9CA12CA7
SCHEMBL2922354 0.82 CA2 (0.37) PKMCA1CA2CA9HSD11B1
SCHEMBL1804139 0.81 GAA (0.35) PKMCA1CA2HSD11B1GAA
SCHEMBL1800748 0.80 CA1 (0.34) PKMCA1CA2HSD11B1GAA
SCHEMBL504035 0.80 SOS1 (0.32) PKMCA1CA2HSD11B1MMP2
SCHEMBL64775 0.80 PPARA (0.32) KMT2A
SCHEMBL36178 0.80 CA2 (0.36) CA1CA2CA9ALDH1A1
SCHEMBL36628 0.79 CA1 (0.40) CA1CA2CA9HSD11B1MAPK1
SCHEMBL548507 0.79 CA1 (0.42) CA1CA2CA9HSD11B1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070122744-A1 Positive-working photoresist composition and photosensitive material using same MAEMORI SATOSHI 2007-05-31 US disclosed
US-20050037291-A1 Method for forming fine resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2005-02-17 US disclosed
US-6818380-B2 DECREASING NUMBER OF DEFECTS BY USING PHOTORESIST OF AQUEOUS SOLUTION OF TETRAMETHYLAMMONIUM HYDROXIDE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-11-16 US disclosed
US-6777158-B2 OCCURRENCE OF DEFECTS IN THE PATTERNED RESIST LAYER CAN BE GREATLY SUPPRESSED RESULTING IN INCREASED RELIABILITY OF THE SEMICONDUCTOR DEVICES AND PRODUCTIVITY THEREOF. TOKYO OHKA KOGYO CO., LTD. (JP) 2004-08-17 US disclosed
US-20040072103-A1 Positive-working photoresist composition SATO KAZUFUMI (JP) 2004-04-15 US disclosed
US-20040067615-A1 Method for the preparation of a semiconductor device MAEMORI SATOSHI (JP) 2004-04-08 US disclosed
US-6677103-B2 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2004-01-13 US disclosed
US-6444394-B1 Positive-working photoresist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2002-09-03 US disclosed
US-20020110750-A1 Positive-working photoresist composition SATO KAZUFUMI (JP) 2002-08-15 US disclosed
US-20020106580-A1 Method for forming a hole-patterned photoresist layer TOKYO OHKA KOGYO CO., LTD. (JP) 2002-08-08 US disclosed
US-20020058202-A1 Positive-working photoresist composition and photosensitive material using same TOKYO OHKA KOGYO CO., LTD. (JP) 2002-05-16 US disclosed
US-20020045133-A1 Method for the preparation of a semiconductor device TOKYO OHKA KOGYO CO., LTD. (JP) 2002-04-18 US disclosed