Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12890910 | 0.82 | GABRA1 (0.32) | — | |
| SCHEMBL21871902 | 0.76 | PDE2A (0.32) | — | |
| SCHEMBL548715 | 0.73 | ALOX5 (0.34) | NLRP3CA2 | |
| SCHEMBL23386029 | 0.71 | NLRP3 (0.32) | NLRP3CA2 | |
| SCHEMBL548057 | 0.71 | NLRP3 (0.32) | NLRP3CA2 | |
| SCHEMBL547952 | 0.68 | NLRP3 (0.31) | NLRP3CA2 | |
| SCHEMBL24023197 | 0.67 | — | — | |
| SCHEMBL12931861 | 0.67 | — | — | |
| SCHEMBL22282359 | 0.67 | NLRP3 (0.33) | NLRP3CA2 | |
| SCHEMBL18995067 | 0.67 | NLRP3 (0.40) | NLRP3CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240018166-A1 | SULFONYL UREA NLRP3 INFLAMMASOME INHIBITORS | VenatoRx Pharmaceuticals, Inc. | 2024-01-18 | — | — | US | disclosed |
| US-20240018166-A1 | SULFONYL UREA NLRP3 INFLAMMASOME INHIBITORS | VenatoRx Pharmaceuticals, Inc. | 2024-01-18 | — | — | US | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11845715-B2 | — | — | 2023-12-19 | — | — | US | disclosed |
| US-11845715-B2 | — | — | 2023-12-19 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-11130731-B2 | Sulfonylureas and related compounds and use of same | THE PROVOST, FELLOWS, FOUNDATION SCHOLARS, AND THE OTHER MEMBERS OF BOARD, OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH NEAR DUBLIN (IE) | 2021-09-28 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| US-7871751-B2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-01-18 | — | — | US | disclosed |
| CN-1942825-B | Resist composition | MITSUBISHI GAS CHEMICAL CO | 2010-05-12 | — | — | CN | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| CN-101528653-A | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2009-09-09 | — | — | CN | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080153031-A1 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-06-26 | — | — | US | disclosed |
| US-7323284-B2 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2008-01-29 | — | — | US | disclosed |
| CN-1942825-A | Resist composition | MITSUBISHI GAS CHEMICAL CO (JP) | 2007-04-04 | — | — | CN | disclosed |
| EP-1739485-A1 | RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-01-03 | — | — | EP | disclosed |
| US-20030022095-A1 | Negative type radiation sensitive resin composition | JSR CORPORATION (JP) | 2003-01-30 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | NLRP3 2028/4885CA2 3332/4885 |
| US-11845715-B2 | — | NLRP3, PYCARD, NOD1 | NLRP3 1/4885CA2 3818/4885 |
| US-11130731-B2 | Sulfonylureas and related compounds and use of same | NLRP3, PYCARD, IAPP | NLRP3 1/4885CA2 2434/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | NLRP3 1183/4885CA2 1466/4885 |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | C1S, C9, RAD51 | NLRP3 1021/4885CA2 2466/4885 |
| US-20240018166-A1 | SULFONYL UREA NLRP3 INFLAMMASOME INHIBITORS | NLRP3, PYCARD, NOD1 | NLRP3 1/4885CA2 3835/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | NLRP3 1183/4885CA2 1466/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.