SCHEMBL547888

SCHEMBL547888

Cc1occc1C(C)(C)O

nearest known ligand 0.40

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 2/20 0.40
KDM4E B2RXH2 2/20 0.40
LMNA P02545 1/20 0.40
HPGD P15428 1/20 0.37
NLRP3 Q96P20 1/20 0.34
TSHR P16473 2/20 0.32
MAPK1 P28482 2/20 0.32
ESR2 Q92731 1/20 0.32
HTT P42858 2/20 0.32
RAB9A P51151 2/20 0.32
SMN1; SMN2 Q16637 2/20 0.32
NPC1 O15118 1/20 0.32
PKM P14618 1/20 0.32
POLB P06746 1/20 0.32
KMT2A Q03164 2/20 0.31
MEN1 O00255 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL802241 0.80 KDM4E (0.38) ALOX5KDM4ELMNAHPGDTSHR
SCHEMBL11866940 0.76 NLRP3 (0.31) HPGDNLRP3
SCHEMBL11097223 0.74 ALOX5 (0.39) ALOX5KDM4ELMNAHPGDRAB9A
SCHEMBL19718161 0.73 SMN1; SMN2 (0.38) ALOX5KDM4ELMNAHPGDTSHR
SCHEMBL29085531 0.71 KDM4E (0.36) ALOX5KDM4ELMNAHPGDTSHR
SCHEMBL11820396 0.69 HPGD (0.36) ALOX5KDM4ELMNAHPGDTSHR
SCHEMBL6862366 0.67 NLRP3 (0.43) NLRP3HTT
SCHEMBL29477140 0.64 MAOA (0.38) KDM4EHPGDPOLBKMT2AMEN1
Methyl Alcohol SCHEMBL28859815 0.64
SCHEMBL910046 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 138 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2022-02-08 US disclosed
EP-3062151-B1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM MITSUBISHI GAS CHEMICAL CO (JP) 2021-05-05 EP disclosed
EP-3141957-B1 RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-24 EP disclosed
EP-3279728-B1 RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL CO (JP) 2021-03-17 EP disclosed
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-31 US disclosed
US-10816898-B2 2020-10-27 US disclosed
US-20200262787-A1 OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-08-20 US disclosed
EP-3279190-B1 RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN MITSUBISHI GAS CHEMICAL CO (JP) 2020-08-12 EP disclosed
US-7871751-B2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2011-01-18 US disclosed
CN-1942825-B Resist composition MITSUBISHI GAS CHEMICAL CO 2010-05-12 CN disclosed
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2010-02-25 US disclosed
CN-101528653-A Radiation-sensitive composition MITSUBISHI GAS CHEMICAL CO (JP) 2009-09-09 CN disclosed
EP-2080750-A1 RADIATION-SENSITIVE COMPOSITION Mitsubishi Gas Chemical Company, Inc. (JP) 2009-07-22 EP disclosed
US-20080153031-A1 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2008-06-26 US disclosed
US-7323284-B2 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2008-01-29 US disclosed
CN-1942825-A Resist composition MITSUBISHI GAS CHEMICAL CO (JP) 2007-04-04 CN disclosed
EP-1739485-A1 RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2007-01-03 EP disclosed
US-20030022095-A1 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2003-01-30 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 ALOX5 724/4885KDM4E 3079/4885LMNA 772/4885
US-20200409261-A1 COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, RESIST PATTERN FORMATION METHOD, METHOD FOR PRODUCING AMORPHOUS FILM, UNDERLAYER FILM FORMING MATERIAL FOR LITHOGRAPHY, COMPOSITION FOR UNDERLAYER FILM FORMATION FOR LITHOGRAPHY, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD C9, C1R, RAD51 ALOX5 419/4885KDM4E 1265/4885LMNA 736/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R ALOX5 290/4885KDM4E 821/4885LMNA 723/4885
US-20200262787-A1 OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF TERB1, C5, TERT ALOX5 28/4885KDM4E 447/4885LMNA 912/4885
US-20100047709-A1 RADIATION-SENSITIVE COMPOSITION C1S, C9, RAD51 ALOX5 807/4885KDM4E 234/4885LMNA 286/4885
US-11243467-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R ALOX5 290/4885KDM4E 821/4885LMNA 723/4885
US-10816898-B2 C5, C9, H1-0 ALOX5 71/4885KDM4E 1875/4885LMNA 3102/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.