Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.42 |
| ▸ | SIGMAR1 | Q99720 | 3/20 | 0.39 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.35 |
| ▸ | HPGD | P15428 | 1/20 | 0.33 |
| ▸ | MCHR1 | Q99705 | 1/20 | 0.33 |
| ▸ | METAP1 | P53582 | 1/20 | 0.32 |
| ▸ | CHRM5 | P08912 | 2/20 | 0.32 |
| ▸ | ADRA2C | P18825 | 1/20 | 0.32 |
| ▸ | CHRM2 | P08172 | 1/20 | 0.32 |
| ▸ | CHRM4 | P08173 | 1/20 | 0.32 |
| ▸ | CHRM1 | P11229 | 1/20 | 0.32 |
| ▸ | CDK1 | P06493 | 1/20 | 0.32 |
| ▸ | CCNB1 | P14635 | 1/20 | 0.32 |
| ▸ | CCNA2 | P20248 | 1/20 | 0.32 |
| ▸ | CDK2 | P24941 | 1/20 | 0.32 |
| ▸ | CCNA1 | P78396 | 1/20 | 0.32 |
| ▸ | HRH3 | Q9Y5N1 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL548351 | 0.97 | — | — | |
| SCHEMBL3020075 | 0.92 | — | — | |
| SCHEMBL127247 | 0.86 | — | — | |
| SCHEMBL11157143 | 0.85 | CYP1A2 (0.50) | NFE2L2CYP1A2SIGMAR1EPHX1HPGD | |
| SCHEMBL11224710 | 0.78 | CYP1A2 (0.46) | NFE2L2CYP1A2SIGMAR1EPHX1HPGD | |
| SCHEMBL8743871 | 0.78 | CYP1A2 (0.46) | NFE2L2CYP1A2SIGMAR1EPHX1HPGD | |
| SCHEMBL21938959 | 0.76 | CYP1A2 (0.44) | NFE2L2CYP1A2SIGMAR1EPHX1HPGD | |
| SCHEMBL4915411 | 0.75 | NFE2L2 (0.40) | NFE2L2CYP1A2SIGMAR1EPHX1HPGD | |
| SCHEMBL8986251 | 0.75 | NFE2L2 (0.42) | NFE2L2CYP1A2SIGMAR1EPHX1HPGD | |
| SCHEMBL1145740 | 0.74 | CYP1A2 (0.48) | NFE2L2CYP1A2SIGMAR1EPHX1METAP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 152 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2955575-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYPHENOL DERIVATIVE USED IN SAME | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | claimed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | claimed |
| US-20150030980-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-01-29 | — | — | US | claimed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| EP-4219477-A1 | CYANOTRIAZOLE COMPOUNDS | Otsuka Pharmaceutical Co., Ltd. (JP) | 2023-08-02 | — | — | EP | disclosed |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-06-15 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| CN-115605458-A | Compound and method for producing same, acid generator, composition, resist film, underlayer film, pattern formation method, and optical article | 学校法人关西大学（JP） | 2023-01-13 | — | — | CN | disclosed |
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-05-12 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-20020143023-A1 | Dihydropyrimidine compounds and compositions containing the same | AJINOMOTO CO. INC (JP) | 2002-10-03 | — | — | US | disclosed |
| WO-2002062762-A2 | POTASSIUM CHANNEL OPENERS | ABBOTT LABORATORIES (US) | 2002-08-15 | — | — | WO | disclosed |
| WO-2002062761-A1 | AMINAL DIONES AS POTASSIUM CHANNEL OPENERS | ABBOTT LABORATORIES (US) | 2002-08-15 | — | — | WO | disclosed |
| EP-1198456-A2 | POTASSIUM CHANNEL OPENERS | Abbott Laboratories (US) | 2002-04-24 | — | — | EP | disclosed |
| EP-1193259-A1 | DIHYDROPYRIMIDINE DERIVATIVES | Ajinomoto Co., Inc. (JP) | 2002-04-03 | — | — | EP | disclosed |
| EP-1191022-A1 | NOVEL DIHYDROPYRIDINE DERIVATIVE | Ajinomoto Co., Inc. (JP) | 2002-03-27 | — | — | EP | disclosed |
| EP-1191021-A1 | DIHYDROPYRIDINE DERIVATIVE | Ajinomoto Co., Inc. (JP) | 2002-03-27 | — | — | EP | disclosed |
| US-20020028836-A1 | Potassium channel openers | ABBVIE INC. | 2002-03-07 | — | — | US | disclosed |
| WO-2001009096-A2 | POTASSIUM CHANNEL OPENERS | ABBOTT LABORATORIES (US) | 2001-02-08 | — | — | WO | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20020028836-A1 | Potassium channel openers | KCNJ2, KCNJ11, KCNJ1 | NFE2L2 1286/4885CYP1A2 1723/4885SIGMAR1 2842/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | NFE2L2 2826/4885CYP1A2 4327/4885SIGMAR1 4861/4885 |
| US-20020143023-A1 | Dihydropyrimidine compounds and compositions containing the same | CACNA1B, CACNA1D, CACNA1G | NFE2L2 1037/4885CYP1A2 3911/4885SIGMAR1 1832/4885 |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | SOAT2, SOAT1, FAR1 | NFE2L2 1429/4885CYP1A2 402/4885SIGMAR1 1925/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | NFE2L2 1721/4885CYP1A2 1625/4885SIGMAR1 2957/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | NFE2L2 2988/4885CYP1A2 1713/4885SIGMAR1 1121/4885 |
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | RER1, UNC119, FEM1B | NFE2L2 3871/4885CYP1A2 3925/4885SIGMAR1 4303/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | NFE2L2 2988/4885CYP1A2 1713/4885SIGMAR1 1121/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.