Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IKBKB | O14920 | 1/20 | 0.41 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.41 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | SRD5A2 | P31213 | 1/20 | 0.40 |
| ▸ | TYR | P14679 | 1/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 3/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.39 |
| ▸ | MAPT | P10636 | 4/20 | 0.39 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.39 |
| ▸ | ESRRG | P62508 | 1/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.38 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.38 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.38 |
| ▸ | APEX1 | P27695 | 1/20 | 0.38 |
| ▸ | RECQL | P46063 | 1/20 | 0.38 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.38 |
| ▸ | NPC1 | O15118 | 3/20 | 0.37 |
| ▸ | RAB9A | P51151 | 3/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10003829 | 0.93 | MAPT (0.45) | IKBKBHDAC1SMN1; SMN2LMNASRD5A2 | |
| SCHEMBL2914242 | 0.82 | NPC1 (0.44) | SMN1; SMN2LMNATDP1MAPTALDH1A1 | |
| SCHEMBL1002371 | 0.80 | TRPV1 (0.38) | IKBKBHDAC1SMN1; SMN2LMNASRD5A2 | |
| SCHEMBL10895777 | 0.78 | LMNA (0.48) | IKBKBHDAC1SMN1; SMN2LMNASRD5A2 | |
| SCHEMBL545396 | 0.75 | PDK1 (0.38) | HDAC1SMN1; SMN2LMNASRD5A2TYR | |
| SCHEMBL515585 | 0.74 | LMNA (0.47) | SMN1; SMN2LMNATDP1KDM4EMAPT | |
| SCHEMBL110015 | 0.74 | TDP1 (0.55) | HDAC1LMNASRD5A2TDP1MAPT | |
| SCHEMBL1976672 | 0.72 | CYP17A1 (0.48) | LMNAKDM4EMAPTL3MBTL1ALDH1A1 | |
| SCHEMBL337701 | 0.69 | MAPT (0.59) | SMN1; SMN2LMNASRD5A2TDP1KDM4E | |
| SCHEMBL1718943 | 0.69 | CA1 (0.43) | HDAC1SMN1; SMN2LMNATYRCYP1A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 229 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2026100410-A1 | IODINE-CONTAINING POLYMERIZABLE COMPOUND AND IODINE-CONTAINING POLYMER | 三菱瓦斯化学株式会社 | 2026-05-15 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-10-25 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3279727-B1 | COMPOUND, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN USING IT | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-06-09 | — | — | EP | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| US-20010036589-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | MERCK PATENT GMBH (DE) | 2001-11-01 | — | — | US | disclosed |
| US-20010024765-A1 | Novel process for preparing resists | MERCK PATENT GMBH (DE) | 2001-09-27 | — | — | US | disclosed |
| EP-0827970-B1 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT FINANCE BVI LTD (VG) | 2001-09-26 | — | — | EP | disclosed |
| US-6284427-B1 | Process for preparing resists | CLARIANT FINANCE (BVI) LIMITED (VG) | 2001-09-04 | — | — | US | disclosed |
| US-6110639-A | Radiation-sensitive composition and recording medium using the same | HOECHST JAPAN LIMITED (JP) | 2000-08-29 | — | — | US | disclosed |
| US-6074800-A | Photo acid generator compounds, photo resists, and method for improving bias | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2000-06-13 | — | — | US | disclosed |
| EP-0989459-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | disclosed |
| EP-0942329-A1 | NOVEL PROCESS FOR PREPARING RESISTS | Clariant International Ltd. (CH) | 1999-09-15 | — | — | EP | disclosed |
| US-5852128-A | Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT AG (CH) | 1998-12-22 | — | — | US | disclosed |
| EP-0827970-A2 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | Clariant AG (CH) | 1998-03-11 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11480877-B2 | Resist composition, method for forming resist pattern, and polyphenol compound used therein | SLC11A2, ABCC1, FBL | IKBKB 4064/4885HDAC1 1297/4885SMN1; SMN2 2654/4885 |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | IKBKB 4182/4885HDAC1 3482/4885SMN1; SMN2 4342/4885 |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | RDX, SLC11A2, FBL | IKBKB 3989/4885HDAC1 1014/4885SMN1; SMN2 2997/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | IKBKB 4413/4885HDAC1 1900/4885SMN1; SMN2 4809/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | IKBKB 4413/4885HDAC1 1900/4885SMN1; SMN2 4809/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.