Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PDK1 | Q15118 | 1/20 | 0.38 |
| ▸ | PDK2 | Q15119 | 1/20 | 0.38 |
| ▸ | PDK3 | Q15120 | 1/20 | 0.38 |
| ▸ | PDK4 | Q16654 | 1/20 | 0.38 |
| ▸ | TRPV1 | Q8NER1 | 3/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.34 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 3/20 | 0.33 |
| ▸ | MAPK1 | P28482 | 2/20 | 0.33 |
| ▸ | SRD5A2 | P31213 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | XBP1 | P17861 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.33 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 3/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7455429 | 0.86 | NPC1 (0.37) | SMN1; SMN2MAPTMAPK1MEN1NPC1 | |
| SCHEMBL1002371 | 0.84 | TRPV1 (0.38) | PDK1PDK2PDK3PDK4TRPV1 | |
| SCHEMBL548375 | 0.75 | IKBKB (0.41) | SMN1; SMN2HDAC1MAPTMAPK1SRD5A2 | |
| SCHEMBL10601724 | 0.75 | THRB (0.41) | HDAC1 | |
| SCHEMBL10003829 | 0.70 | MAPT (0.45) | TRPV1SMN1; SMN2HDAC1MAPTMAPK1 | |
| SCHEMBL3439642 | 0.70 | HDAC1 (0.37) | SMN1; SMN2HDAC1MAPTMAPK1SRD5A2 | |
| SCHEMBL114860 | 0.69 | CA1 (0.36) | PDK1PDK2PDK3PDK4MAPT | |
| SCHEMBL515862 | 0.68 | CFTR (0.45) | PDK2PDK4TRPV1MAPTMEN1 | |
| SCHEMBL448975 | 0.68 | CA2 (0.37) | PDK1PDK2PDK3PDK4LMNA | |
| SCHEMBL3090902 | 0.68 | CA2 (0.37) | PDK1PDK2PDK3PDK4LMNA |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6794109-B2 | POLYMER CONTAINING A FLUORINATED STYRENE COPOLYMER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2004-09-21 | — | — | US | claimed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | claimed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | claimed |
| US-20180212026-A1 | SURFACE MODIFIED DIAMOND MATERIALS AND METHODS OF MANUFACTURING | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2018-07-26 | — | — | US | disclosed |
| US-8158338-B2 | Resist sensitizer | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-04-17 | — | — | US | disclosed |
| US-8110339-B2 | Multi-tone resist compositions | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2012-02-07 | — | — | US | disclosed |
| WO-2010005428-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2010-01-14 | — | — | WO | disclosed |
| US-20100009289-A1 | RESIST SENSITIZER | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2010-01-14 | — | — | US | disclosed |
| WO-2009032890-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (MIT) (US) | 2009-03-12 | — | — | WO | disclosed |
| US-20090068589-A1 | MULTI-TONE RESIST COMPOSITIONS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2009-03-12 | — | — | US | disclosed |
| US-7153630-B2 | Resist with reduced line edge roughness | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2006-12-26 | — | — | US | disclosed |
| US-20030099897-A1 | Surface modified encapsulated inorganic resist | MASS INSTITUTE OF TECHNOLOGY (MIT) | 2003-05-29 | — | — | US | disclosed |
| US-20030036015-A1 | Resist with reduced line edge roughness | AIR FORCE, UNITED STATES | 2003-02-20 | — | — | US | disclosed |
| EP-1257880-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-20 | — | — | EP | disclosed |
| WO-2002091084-A2 | RESIST WITH REDUCED LINE EDGE ROUGHNESS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-11-14 | — | — | WO | disclosed |
| US-20020160297-A1 | Low abosorbing resists for 157 nm lithography | AIR FORCE, UNITED STATES | 2002-10-31 | — | — | US | disclosed |
| US-6468712-B1 | PHOTOLITHOGRAPHY AT VERY SHORT ULTRAVIOLET WAVELENGTHS EMPLOYING A PHOTO-ACID GENERATOR AND AN ALIPHATIC POLYMER THAT INCLUDES ONE OR MORE PROTECTED HYDROXYL GROUPS; FLUORIDE EXCIMER LASERS; ENHANCED RESOLUTION | MASSACHUSETTS INSTITUTE OF TECHNOLOGY | 2002-10-22 | — | — | US | disclosed |
| WO-2002069043-A2 | LOW ABSORBING RESISTS FOR 157 NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2002-09-06 | — | — | WO | disclosed |
| WO-2001063362-A2 | RESIST MATERIALS FOR 157-NM LITHOGRAPHY | MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) | 2001-08-30 | — | — | WO | disclosed |
| WO-2001063360-A2 | ENCAPSULATED INORGANIC RESISTS | MASSACHUSETTS INSTITUTE OF TECHNOLOGY, INC. (US) | 2001-08-30 | — | — | WO | disclosed |