SCHEMBL548591

SCHEMBL548591

FC(F)(F)c1ccc([I+]c2ccc(C(F)(F)F)cc2)cc1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KIF11 P52732 1/20 0.38
CA2 P00918 15/20 0.35
CA1 P00915 14/20 0.35
MMP1 P03956 2/20 0.34
MMP2 P08253 2/20 0.34
MMP9 P14780 2/20 0.34
MMP8 P22894 2/20 0.34
MMP13 P45452 2/20 0.34
CA9 Q16790 1/20 0.34
ALDH1A1 P00352 1/20 0.33
MLYCD O95822 1/20 0.33
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
HTR2A P28223 1/20 0.32
HTR2C P28335 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL548235 0.98 CA2 (0.38) KIF11CA2CA1MMP1MMP2
SCHEMBL114859 0.88 ALDH1A1 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL8038207 0.86 ALDH1A1 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL448974 0.86 ALDH1A1 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL1801410 0.85 CA2 (0.36) CA2CA1MMP1MMP2MMP9
Toliodium SCHEMBL2895493 0.84 TLR9 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL1805139 0.84 CA2 (0.36) CA2CA1MMP1MMP2MMP9
SCHEMBL3284972 0.84 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL7570325 0.84 ALDH1A1 (0.36) CA2CA1ALDH1A1MEN1KMT2A
SCHEMBL51422 0.83 CA2 (0.38) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 175 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250362597-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-11-27 US disclosed
US-20250321485-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-10-16 US disclosed
US-20240369925-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed
US-20240369924-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2024-11-07 US disclosed
WO-2024014329-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2024-01-18 WO disclosed
WO-2024014330-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME 三菱瓦斯化学株式会社 2024-01-18 WO disclosed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-20230096312-A1 RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-03-30 US disclosed
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-02-07 US disclosed
WO-2023008355-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION 三菱瓦斯化学株式会社 2023-02-02 WO disclosed
US-6830868-B2 Useful as a chemically amplified resist responding to active radiation, for example ultraviolet rays such as a KrF excimer laser, ArF excimer laser, and F2 excimer laser JSR CORPORATION (JP) 2004-12-14 US disclosed
US-6821705-B2 USED AS CHEMICALLY AMPLIFIED RESIST, EXHIBITS HIGH SENSITIVITY, RESOLUTION, RADIATION TRANSMITTANCE, AND SURFACE SMOOTHNESS, AND IS FREE FROM THE PROBLEM OF PARTIAL INSOLUBLIZATION DURING OVEREXPOSURE JSR CORPORATION (JP) 2004-11-23 US disclosed
US-20040191672-A1 Resist composition MITSUBISHI GAS CHEMICAL CO., LTD. (JP) 2004-09-30 US disclosed
EP-1443362-A2 Resist composition MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2004-08-04 EP disclosed
US-6770780-B1 QUATERNIZATION OF T-BUTYL BROMOACETATE WITH TRI(N-BUTYL)PHOSPHINE TO FORM PHOSPHONIUM SALT; REACTING WITH BASE TO FORM PHOSPHORUS YLIDE; FORMING 2,4,6-TRIS(3', 5'-DI-T-BUTYL-4'-HYDROXYBENZYL)METHYL-STYRENE; HYDROLYSIS JSR CORPORATION (JP) 2004-08-03 US disclosed
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition JSR CORPORATION (JP) 2003-10-16 US disclosed
EP-1343048-A2 Anthracene derivative and radiation-sensitive resin composition JSR Corporation (JP) 2003-09-10 EP disclosed
US-20030022095-A1 Negative type radiation sensitive resin composition JSR CORPORATION (JP) 2003-01-30 US disclosed
EP-1253470-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-10-30 EP disclosed
EP-1231205-A1 VINYLPHENYLPROPIONIC ACID DERIVATIVES, PROCESSES FOR PRODUCTION OF THE DERIVATIVES, POLYMERS THEREOF AND RADIOSENSITIVE RESIN COMPOSITIONS JSR Corporation (JP) 2002-08-14 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030194634-A1 Novel anthracene derivative and radiation-sensitive resin composition SRSF1, ARL1, ERCC4 KIF11 1660/4885CA2 927/4885CA1 393/4885
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 KIF11 682/4885CA2 3332/4885CA1 1120/4885
US-11572430-B2 Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method C9, C5, C1R KIF11 3842/4885CA2 1466/4885CA1 161/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.