Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 17/20 | 0.38 |
| ▸ | CA1 | P00915 | 16/20 | 0.38 |
| ▸ | MMP1 | P03956 | 4/20 | 0.36 |
| ▸ | MMP2 | P08253 | 4/20 | 0.36 |
| ▸ | MMP9 | P14780 | 4/20 | 0.36 |
| ▸ | MMP8 | P22894 | 4/20 | 0.36 |
| ▸ | MMP13 | P45452 | 4/20 | 0.36 |
| ▸ | GPR3 | P46089 | 1/20 | 0.35 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL213386 | 0.98 | CA2 (0.40) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL59303 | 0.98 | CA2 (0.40) | CA2CA1MMP1MMP2MMP9 | |
| Trifluoromethanesulfonic Acid SCHEMBL12613417 | 0.97 | GPR3 (0.40) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL1805421 | 0.92 | CA2 (0.34) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL3284031 | 0.91 | CA2 (0.35) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL7702939 | 0.91 | GPR3 (0.35) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL7708260 | 0.89 | HSD11B1 (0.38) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL5372804 | 0.87 | HSD11B1 (0.37) | CA2CA1MMP1MMP2MMP9 | |
| SCHEMBL1804138 | 0.87 | ALDH1A1 (0.38) | MMP1MMP9MMP13 | |
| SCHEMBL2903996 | 0.87 | MMP2 (0.42) | CA2CA1MMP1MMP2MMP9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 2416 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121873631-B | Spin-on carbon composition, semiconductor preparation method and semiconductor device | Jiageng Innovation Laboratory (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122043865-A | High-resolution photoresist composition and preparation method thereof | 西安尤尼亢新材料有限公司 | 2026-05-15 | — | — | CN | claimed |
| CN-122011922-A | Bottom anti-reflection coating composition and preparation and application thereof | 嘉庚创新实验室 | 2026-05-12 | — | — | CN | claimed |
| CN-119463004-B | 3, 4-Dihydroxystyrene polymer, preparation thereof and photoresist composition | 微芯新材料(湖州)有限公司 | 2025-06-10 | — | — | CN | claimed |
| CN-120005123-A | Acrylic ester block copolymer resin, photoresist, and preparation method and application thereof | 中国石油化工股份有限公司 | 2025-05-16 | — | — | CN | claimed |
| CN-119923600-A | Chemically amplified positive resist composition for improving pattern profile and enhancing adhesion | YC化学制品株式会社 | 2025-05-02 | — | — | CN | claimed |
| CN-113296359-B | Bottom layer composition and method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2025-05-02 | — | — | CN | claimed |
| CN-119463004-A | 3, 4-Dihydroxystyrene polymer, preparation thereof and photoresist composition | 微芯新材料(湖州)有限公司 | 2025-02-18 | — | — | CN | claimed |
| CN-119463075-A | Poly (4-hydroxystyrene) -based block copolymer and preparation and application thereof | 微芯新材料(湖州)有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| WO-2006091523-A2 | NORBORNENE-TYPE POLYMERS, COMPOSITIONS THEREOF AND LITHOGRAPHIC PROCESSES USING SUCH COMPOSITIONS | PROMERUS LLC (US) | 2006-08-31 | — | — | WO | claimed |
| US-7033728-B2 | Photoresist composition | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2006-04-25 | — | — | US | claimed |
| EP-1612603-A2 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2006-01-04 | — | — | EP | claimed |
| US-20050277055-A1 | Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device | FUJITSU LIMITED (JP) | 2005-12-15 | — | — | US | claimed |
| WO-2005066714-A2 | PHOTORESIST COMPOSITION | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2005-07-21 | — | — | WO | claimed |
| US-20050147915-A1 | Photoresist composition | MERCK PATENT GMBH (DE) | 2005-07-07 | — | — | US | claimed |
| US-20040170918-A1 | Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray | WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) | 2004-09-02 | — | — | US | claimed |
| EP-1406123-A1 | RESIST COMPOSITIONS | Wako Pure Chemical Industries, Ltd. (JP) | 2004-04-07 | — | — | EP | claimed |
| US-6447980-B1 | POLY(MALEIC ANHYDRIDE-CO-T-BUTYL 5-NORBORNENE-2-CARBOXYLATE-CO-2-HYDROXYETHYL 5-NORBORNENE-2-CARBOXYLATE-CO-5-NORBORNENE-2-CARBOXYLIC ACID-CO-2-METHYL ADAMANTYL METHACRYLATE-CO-MEVALONIC LACTONE) AND ACID GENERATOR | CLARIANT FINANCE (BVI) LIMITED (VG) | 2002-09-10 | — | — | US | claimed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | claimed |