SCHEMBL560826

SCHEMBL560826

CC(CO)CC(O)CCO

nearest known ligand 0.52

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
THRB P10828 1/20 0.52
TSHR P16473 2/20 0.42
TDP1 Q9NUW8 1/20 0.38
TRPA1 O75762 3/20 0.35
ALDH1A1 P00352 2/20 0.33
ALOX15 P16050 1/20 0.33
LMNA P02545 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5907165 0.82 TSHR (0.59) THRBTSHRTDP1TRPA1ALDH1A1
SCHEMBL14433121 0.82 TSHR (0.59) THRBTSHRTDP1TRPA1ALDH1A1
SCHEMBL1581214 0.82 THRB (0.43) THRBTSHRTDP1TRPA1ALDH1A1
SCHEMBL16074666 0.80
SCHEMBL24653412 0.80 TSHR (0.50) THRBTSHRTRPA1ALDH1A1ALOX15
SCHEMBL2230130 0.80 USP2 (0.36) THRBTSHRTDP1TRPA1
SCHEMBL19493225 0.79 THRB (0.52) THRBTSHRTDP1TRPA1ALDH1A1
SCHEMBL21092119 0.78 THRB (0.40) THRBTSHRTRPA1ALDH1A1ALOX15
SCHEMBL8413806 0.78 TSHR (0.43) THRBTSHRLMNA
SCHEMBL8652009 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1915411-A1 NEW ORGANIC BOTTOM ANTIREFLECTIVE POLYMER COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2008-04-30 EP claimed
US-20070020557-A1 New organic bottom antireflective polymer compositions AZ ELECTRONIC MATERIALS USA CORP. 2007-01-25 US claimed
WO-2007010385-A1 NEW ORGANIC BOTTOM ANTIREFLECTIVE POLYMER COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-01-25 WO claimed
US-20250231491-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-20250231492-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-11493845-B2 Organic bottom antireflective coating composition for nanolithography ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-08 US disclosed
US-20210380612-A1 PHOTORESIST COMPOSITIONS SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-12-09 US disclosed
US-11092894-B2 Method for forming pattern using anti-reflective coating composition comprising photoacid generator ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2021-08-17 US disclosed
CN-105223774-B Method of forming pattern using anti-reflective coating composition including photoacid generator 罗门哈斯电子材料韩国有限公司 2019-12-20 CN disclosed
US-20170298058-A1 HETEROCYCLIC RING AND CARBOCYCLIC DERIVATIVE SHIONOGI & CO (JP) 2017-10-19 US disclosed
US-20160187781-A1 METHOD FOR FORMING PATTERN USING ANTI-REFLECTIVE COATING COMPOSITION COMPRISING PHOTOACID GENERATOR DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-06-30 US disclosed
US-7163751-B2 spin-on antireflective coating compositions that contain an aromatic polyester resin and a solvent comprising an oxyisobutyric acid ester, especially methyl-2-hydroxyisobutyrate; SHIPLEY COMPANY, L.L.C. (US) 2007-01-16 US disclosed
US-20060057491-A1 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2006-03-16 US disclosed
EP-1598702-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2005-11-23 EP disclosed
WO-2005097883-A2 METHOD OF PRODUCING A CROSSLINKED COATING IN THE MANUFACTURE OF INTEGRATED CIRCUITS KING INDUSTRIES, INC. (US) 2005-10-20 WO disclosed
US-20050215713-A1 Method of producing a crosslinked coating in the manufacture of integrated circuits KING INDUSTRIES, INC. 2005-09-29 US disclosed
US-6852421-B2 Microelectronic wafers having photosensitive antireflective polyester and photoresist multilayers used to form integrated circuits; relief images SHIPLEY COMPANY, L.L.C. (US) 2005-02-08 US disclosed
US-20040209200-A1 spin-on antireflective coating compositions that contain an aromatic polyester resin and a solvent comprising an oxyisobutyric acid ester, especially methyl-2-hydroxyisobutyrate; SHIPLEY COMPANY, L.L.C. 2004-10-21 US disclosed
US-20030180559-A1 Microelectronic wafers having photosensitive antireflective polyester and photoresist multilayers used to form integrated circuits; relief images SHIPLEY COMPANY, L.L.C. 2003-09-25 US disclosed
EP-1298492-A2 Coating compositions for use with an overcoated photoresist Shipley Co. L.L.C. (US) 2003-04-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170298058-A1 HETEROCYCLIC RING AND CARBOCYCLIC DERIVATIVE P2RX3, P2RX7, P2RX2 THRB 747/4885TSHR 737/4885TDP1 4738/4885
US-20210380612-A1 PHOTORESIST COMPOSITIONS NPM1, PORCN, PPOX THRB 4782/4885TSHR 4671/4885TDP1 4355/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.