Water

Water

SCHEMBL5706121

CC(C)c1cc(C(=O)O)c(O)c(C(C)C)c1.O

nearest known ligand 0.58

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO

The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MEN1 known ✓ O00255 2/20 0.44
THRA known ✓ P10827 1/20 0.39
THRB known ✓ P10828 1/20 0.39
FABP3 P05413 2/20 0.58
FABP4 P15090 2/20 0.58
GABRA1 P14867 5/20 0.55
GABRB2 P47870 2/20 0.55
ALDH1A1 P00352 3/20 0.46
HPGD P15428 3/20 0.46
KDM4E B2RXH2 2/20 0.46
GAA P10253 3/20 0.44
KMT2A Q03164 2/20 0.44
FABP5 Q01469 1/20 0.43
BCL2 P10415 2/20 0.42
MCL1 Q07820 2/20 0.42
GABRB1 P18505 4/20 0.42
CA1 P00915 1/20 0.42
CA2 P00918 1/20 0.42
LMNA P02545 1/20 0.41
MAPT P10636 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Water SCHEMBL1436997 0.98 FABP3 (0.56) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL212716 0.98 FABP3 (0.60) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL29593831 0.98 FABP3 (0.60) FABP3FABP4GABRA1GABRB2ALDH1A1
Benzene SCHEMBL9253514 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL11783529 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL11797932 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL10618114 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL6910525 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL11794494 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1
SCHEMBL28203848 0.96 FABP3 (0.58) FABP3FABP4GABRA1GABRB2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8962234-B2 Resist underlayer film forming composition and method for forming resist pattern using the same NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-02-24 US disclosed
US-20140004465-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-01-02 US disclosed
CN-103415809-A Composition for forming resist underlayer film and method for forming resist pattern using same NISSAN CHEMICAL IND LTD 2013-11-27 CN disclosed
EP-1704057-A1 LASER IMAGING Sherwood Technology LTD. (GB) 2006-09-27 EP disclosed
WO-2005068207-A1 LASER IMAGING DATALASE LTD. (GB) 2005-07-28 WO disclosed