Tetrapropylammonium

Tetrapropylammonium

SCHEMBL584932

CCC[N+](CCC)(CCC)CCC.[F-]

nearest known ligand 0.91

Full drug profile on Sugi Atlas →

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ SLC22A1 O15245 4/20 0.91
▸ SLC22A2 O15244 1/20 0.53
▸ ALDH1A1 P00352 1/20 0.47
▸ TP53 P04637 1/20 0.47
▸ CYP3A4 P08684 1/20 0.47
▸ ALOX15 P16050 1/20 0.47
▸ TSHR P16473 1/20 0.47
▸ ALOX12 P18054 1/20 0.47
▸ SMN1; SMN2 Q16637 1/20 0.47
▸ HIF1A Q16665 1/20 0.47
▸ HSD17B10 Q99714 1/20 0.47
▸ DNM1 Q05193 7/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Tetrapropylammonium SCHEMBL28586534 0.96 SLC22A1 (0.83) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL26108365 0.96 SLC22A1 (0.83) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL5490456 0.95 SLC22A1 (1.00) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL59838 0.95 SLC22A1 (1.00) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL15414074 0.92 SLC22A1 (0.77) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL28472624 0.92 SLC22A1 (0.77) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL2723645 0.91 SLC22A1 (0.91) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL9302417 0.91 SLC22A1 (0.91) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL2723643 0.91 SLC22A1 (0.91) SLC22A1SLC22A2ALDH1A1TP53CYP3A4
Tetrapropylammonium SCHEMBL4552588 0.91 SLC22A1 (0.91) SLC22A1SLC22A2ALDH1A1TP53CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1173 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117143592-B Mn (Mn)4+Activated fluoride (oxide) red fluorescent material and preparation method thereof 华南理工大学 2026-05-22 — — CN claimed
CN-121507131-B Fluoride ion solid polymer electrolyte and preparation method and application thereof 苏州大学 2026-05-15 — — CN claimed
CN-116145156-B Indoline compound preparation method based on organic electronic synthesis 六盘水师范学院 2026-05-15 — — CN claimed
US-12624318-B2 Cleaning agent composition and cleaning method NISSAN CHEMICAL CORPORATION (JP) 2026-05-12 — — US claimed
US-20260117393-A1 ETCHING AGENT COMPOSITION AND ETCHING METHOD USING THE SAME KCTECH CO., LTD. (KR) 2026-04-30 — — US claimed
US-20260071152-A1 CLEANING METHOD NISSAN CHEMICAL CORPORATION (JP) 2026-03-12 — — US claimed
US-20250376645-A1 METHOD FOR PRODUCING PROCESSED SEMICONDUCTOR SUBSTRATE NISSAN CHEMICAL CORPORATION (JP) 2025-12-11 — — US claimed
EP-4661058-A1 CLEANING AGENT COMPOSITION AND CLEANING METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-10 — — EP claimed
US-12441964-B2 Cleaning agent composition and cleaning method NISSAN CHEMICAL CORPORATION (JP) 2025-10-14 — — US claimed
US-20250263633-A1 CLEANING AGENT COMPOSITION AND CLEANING METHOD NISSAN CHEMICAL CORPORATION (JP) 2025-08-21 — — US claimed
US-20070000523-A1 Cleaning composition and related methods SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-01-04 — — US claimed
US-20060287207-A1 Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-12-21 — — US claimed
EP-1457550-B1 Composition for removing residues from the microstructure of an object AIR PROD & CHEM (US) 2006-07-05 — — EP claimed
EP-1453080-B1 Process and composition for removing residues from the microstructure of an object AIR PROD & CHEM (US) 2006-07-05 — — EP claimed
WO-2005053004-A1 SELECTIVE REMOVAL CHEMISTRIES FOR SACRIFICIAL LAYERS METHODS OF PRODUCTION AND USES THEREOF HONEYWELL INTERNATIONAL INC. (US) 2005-06-09 — — WO claimed
US-20040198627-A1 Process and apparatus for removing residues from the microstructure of an object KOBE STEEL, LTD. 2004-10-07 — — US claimed
US-20040192572-A1 Process and composition for removing residues from the microstructure of an object KOBE STEEL, LTD. 2004-09-30 — — US claimed
EP-1457550-A2 Composition for removing residues from the microstructure of an object KABUSHIKI KAISHA KOBE SEIKO SHO (JP) 2004-09-15 — — EP claimed
EP-1453080-A1 Process and composition for removing residues from the microstructure of an object KABUSHIKI KAISHA KOBE SEIKO SHO (JP) 2004-09-01 — — EP claimed
EP-1095940-B1 Derivatives of 9-(3,5-dimethoxyphenyl)-5,8,8a,9-tetrahydrofuro[3',4':6,7]naphto[2,3-d][1,3]dioxol-6(5aH)-one, method for their preparation and pharmaceutical compositions containing them SERVIER LAB (FR) 2004-07-21 — — EP claimed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260071152-A1 CLEANING METHOD FGB, CDH1, RNF168 SLC22A1 4536/4885SLC22A2 4602/4885ALDH1A1 3227/4885
US-12624318-B2 Cleaning agent composition and cleaning method DNMT1, TLN1, TET2 SLC22A1 4063/4885SLC22A2 4067/4885ALDH1A1 2705/4885
US-20260117393-A1 ETCHING AGENT COMPOSITION AND ETCHING METHOD USING THE SAME HCN4, HAO2, ASIC1 SLC22A1 2193/4885SLC22A2 2184/4885ALDH1A1 3043/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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