Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL5850147

O=S(=O)([O-])C(F)(F)F.c1ccc(Sc2ccccc2[S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS1 P23219 2/20 0.39
PTGS2 P35354 2/20 0.39
GPR3 P46089 2/20 0.36
MAPT P10636 2/20 0.36
KDM4E B2RXH2 1/20 0.36
NSD2 O96028 1/20 0.36
MAPK1 P28482 1/20 0.36
SIRT1 Q96EB6 1/20 0.33
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA7 P43166 1/20 0.31
CA13 Q8N1Q1 1/20 0.31
TDP1 Q9NUW8 1/20 0.31
PTPN1 P18031 1/20 0.31
ALDH1A1 P00352 1/20 0.30
GLA P06280 1/20 0.30
L3MBTL1 Q9Y468 1/20 0.30
MMP3 P08254 1/20 0.30
MMP8 P22894 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5849960 0.87 PTGS1 (0.32) PTGS1PTGS2MAPTKDM4ENSD2
SCHEMBL2634630 0.86 PTGS1 (0.32) PTGS1PTGS2MAPTKDM4ENSD2
SCHEMBL5849458 0.85 MAPT (0.37) PTGS1PTGS2MAPTKDM4ENSD2
SCHEMBL298034 0.83 SIRT1 (0.40) MAPTKDM4ENSD2MAPK1SIRT1
Trifluoromethanesulfonic Acid SCHEMBL29767233 0.82 GPR3 (0.40) PTGS1PTGS2GPR3CA12CA1
Trifluoromethanesulfonic Acid SCHEMBL51462 0.82 GPR3 (0.40) PTGS1PTGS2GPR3CA12CA1
Hydrochloric Acid SCHEMBL8980364 0.81 SIRT1 (0.39) MAPTKDM4ENSD2MAPK1SIRT1
SCHEMBL5849481 0.81 TDP1 (0.39) MAPTKDM4ENSD2MAPK1CA12
SCHEMBL29848318 0.80 SIRT1 (0.36) MAPTKDM4ENSD2MAPK1SIRT1
SCHEMBL3201612 0.79 SIRT1 (0.40) MAPTKDM4ENSD2MAPK1SIRT1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6984473-B2 Light blocking; amplified photoresist; acid generators; high density semiconductors MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2006-01-10 US disclosed
US-20030152845-A1 Mask blank, protective film therefor and method of patterning mask blank MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2003-08-14 US disclosed