SCHEMBL5855849

SCHEMBL5855849

C=Cc1ccc(O)c(Cc2ccccc2O)c1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
HSPA5 P11021 2/20 0.57
TRPA1 O75762 1/20 0.43
KEAP1 Q14145 1/20 0.43
HIF1A Q16665 4/20 0.41
MEN1 O00255 2/20 0.41
CYP3A4 P08684 2/20 0.41
HPGD P15428 2/20 0.41
ALOX15 P16050 2/20 0.41
KMT2A Q03164 2/20 0.41
IDO1 P14902 2/20 0.41
SLC22A1 O15245 1/20 0.41
USP2 O75604 1/20 0.41
LMNA P02545 1/20 0.41
HSP90AA1 P07900 1/20 0.41
MAPT P10636 1/20 0.41
HSPD1 P10809 1/20 0.41
ALOX12 P18054 1/20 0.41
CASP1 P29466 1/20 0.41
HTT P42858 1/20 0.41
BLM P54132 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13899836 0.91 TRPA1 (0.50) HSPA5TRPA1HIF1AMEN1CYP3A4
SCHEMBL9307175 0.84 MEN1 (0.57) TRPA1KEAP1HIF1AMEN1CYP3A4
SCHEMBL28629080 0.81 TRPA1 (0.46) HSPA5TRPA1KEAP1HIF1AMEN1
SCHEMBL685704 0.77 TRPA1 (0.48) TRPA1HIF1ACYP3A4CYP2D6TSHR
SCHEMBL30101971 0.77 TRPA1 (0.48) TRPA1HIF1ACYP3A4CYP2D6TSHR
SCHEMBL685611 0.76 TRPA1 (0.52) TRPA1HSP90AA1IAPPGABRA1GABRB2
SCHEMBL49745 0.76 HSPA5 (1.00) HSPA5KEAP1HIF1ACYP3A4HPGD
SCHEMBL15524685 0.76 TRPA1 (0.47) TRPA1MEN1CYP3A4HPGDKMT2A
SCHEMBL22160162 0.76 HSPA5 (0.64) HSPA5KEAP1HIF1AIDO1HSD17B10
SCHEMBL29357407 0.76 HSPA5 (1.00) HSPA5KEAP1HIF1ACYP3A4HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1692094-A2 BOTTOM ANTIREFLECTIVE COATINGS AZ Electronic Materials USA Corp. (US) 2006-08-23 EP disclosed
US-7030201-B2 Bottom antireflective coatings AZ ELECTRONIC MATERIALS USA CORP. (US) 2006-04-18 US disclosed
WO-2005052016-A2 BOTTOM ANTIREFLECTIVE COATINGS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2005-06-09 WO disclosed
US-20050112494-A1 Bottom antireflective coatings AZ ELECTRONIC MATERIALS USA CORP. 2005-05-26 US disclosed
US-6818377-B2 ACID GENERATOR; RESIN CONTAINING A POLYALICYCLIC GROUP OR A FURANONE, CYCLOPENTANONE, PYRROLIDONE OR TETRAHYDROTHIOPHENONE GROUP FUJI PHOTO FILM CO., LTD. (JP) 2004-11-16 US disclosed
US-6808869-B1 EXCELLENT LIGHT ABSORBANCE WITH HIGH RESOLUTION AND LOW FILM THICKNESS DEPENDENCY; THERMAL CROSSLINKING AGENT AND A LIGHT ABSORBING ADDITION POLYMER WITH PENDANT NAPHTHALENE RING SUBSTITUTED WITH AN ELECTRON DONATING GROUP FUJI PHOTO FILM CO., LTD. (JP) 2004-10-26 US disclosed
US-20040161697-A2 Positive Photosensitive Composition FUJI PHOTO FILM CO., LTD. (JP) 2004-08-19 US disclosed
US-6699635-B1 SUITABLE FOR THE CASES WHEREIN FAR ULTRAVIOLET RAYS HAVING WAVELENGTHS OF 250 NM OR SHORTER ARE USED AS EXPOSURE LIGHT FUJI PHOTO FILM CO., LTD. (JP) 2004-03-02 US disclosed
EP-0877293-B1 Positive photosensitive composition FUJI PHOTO FILM CO LTD (JP) 2004-01-14 EP disclosed
EP-0989463-B1 Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern FUJI PHOTO FILM CO LTD (JP) 2003-04-16 EP disclosed
US-6238842-B1 SUITABLE FOR USE WITH AN EXPOSURE LIGHT HAVING A WAVELENGTH OF 250 NM OR SHORTER, ESPECIALLY 220 NM OR SHORTER; ACID GENERATING COMPOUND; RESIN HAVING MONOVALENT POLYALICYCLIC GROUPS FUJI PHOTO FILM CO., LTD. (JP) 2001-05-29 US disclosed
US-6165684-A Bottom anti-reflective coating material composition and method for forming resist pattern using the same FUJI PHOTO FILM CO., LTD. (JP) 2000-12-26 US disclosed
US-6090531-A UNDERGOES NO INTERMIXING WITH THE RESIST LAYER, PROVIDES AN EXCELLENT RESIST PATTERN AND SHOWS A HIGHER DRY ETCHING RATE THAN RESIST AND A RESIST PATTERN FORMATION PROCESS FUJI PHOTO FILM CO., LTD. (JP) 2000-07-18 US disclosed
EP-0989463-A2 Bottom anti-reflective coating material composition for photoresist and method of forming resist pattern FUJI PHOTO FILM CO., LTD. (JP) 2000-03-29 EP disclosed
US-6042991-A COMPOUND THAT GENERATES AN ACID WHEN IRRADIATED WITH ACTINIC RAYS AND A RESIN COMPRISING ALICYCLIC RINGS OF GIVEN FORMULA, THAT HAS GROUPS THAT DECOMPOSE DUE TO ACIDS TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPER; DRY ETCH RESISTANCE FUJI PHOTO FILM CO., LTD. (JP) 2000-03-28 US disclosed
US-5945250-A CONTAINING A SULFONIUM SALT RESIN; HAVING GOOD SOLUBILITY IN SOLVENT, HIGH PHOTOSENSITIVITY, EXCELLENT RESIST PATTERN AND STABILITY FUJI PHOTO FILM CO., LTD. (JP) 1999-08-31 US disclosed
EP-0878738-A2 Positive resist composition FUJI PHOTO FILM CO., LTD. (JP) 1998-11-18 EP disclosed
EP-0877293-A2 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 1998-11-11 EP disclosed
EP-0851300-A1 Bottom anti-reflective coating material composition and method of forming resist pattern using the same FUJI PHOTO FILM CO., LTD. (JP) 1998-07-01 EP disclosed
EP-0823661-A1 Composition for anti-reflective coating material FUJI PHOTO FILM CO., LTD. (JP) 1998-02-11 EP disclosed