SCHEMBL5874706

SCHEMBL5874706

CCCCC/C=C\C/C=C\CCCCCCCC(=O)ON1CCNCC1

nearest known ligand 0.51

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.51
F7 P08709 4/20 0.51
F3 P13726 4/20 0.51
KDM4E B2RXH2 3/20 0.51
PPARG P37231 3/20 0.51
PPARD Q03181 3/20 0.51
PPARA Q07869 3/20 0.51
FABP3 P05413 3/20 0.51
FFAR1 O14842 3/20 0.51
PTGS1 P23219 2/20 0.51
DUSP3 P51452 1/20 0.51
PTPN7 P35236 1/20 0.51
LMNA P02545 1/20 0.51
CYP3A4 P08684 1/20 0.51
CYP19A1 P11511 1/20 0.51
FABP4 P15090 1/20 0.51
HPGD P15428 1/20 0.51
ALOX15 P16050 1/20 0.51
TSHR P16473 1/20 0.51
GNA15 P30679 1/20 0.51

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5875440 0.96 CNR1 (0.54) ALDH1A1KDM4EPPARGPPARDPPARA
SCHEMBL5874362 0.96 TERT (0.47) F7F3PPARGPPARDPPARA
SCHEMBL5874554 0.92 ALDH1A1 (0.57) ALDH1A1F7F3KDM4EPPARG
SCHEMBL28907757 0.91 ALDH1A1 (0.58) ALDH1A1F7F3KDM4EPPARG
SCHEMBL5875251 0.88 GNAI3 (0.53) LMNATSHRMAPT
SCHEMBL5874516 0.88 GNAI3 (0.53) LMNATSHRMAPT
SCHEMBL5874398 0.88 GNAI3 (0.53) LMNATSHRMAPT
SCHEMBL5875013 0.88 GNAI3 (0.53) LMNATSHRMAPT
SCHEMBL5874232 0.88 GNAI3 (0.53) LMNATSHRMAPT
SCHEMBL15737064 0.87 ADORA3 (0.55) ALDH1A1F7F3KDM4EPPARG

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed