SCHEMBL60438

SCHEMBL60438

O=S(=O)(OS(c1ccccc1)(c1ccccc1)c1ccccc1)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.44

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CA2 P00918 16/20 0.44
CA1 P00915 15/20 0.44
HSD11B1 P28845 1/20 0.37
NR1H2 P55055 2/20 0.37
NR1I2 O75469 1/20 0.36
NR1H3 Q13133 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4535203 1.00 CA2 (0.44) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL965542 1.00 CA2 (0.44) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL60138 1.00 CA2 (0.44) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL51400 0.98 CA1 (0.43) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL965951 0.93 CA1 (0.39) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL217002 0.93 HTR6 (0.38) CA2CA1HSD11B1NR1H2NR1H3
SCHEMBL3139139 0.93 CA1 (0.43) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL3139675 0.93 CA1 (0.43) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL3136124 0.93 CA1 (0.43) CA2CA1HSD11B1NR1H2NR1I2
SCHEMBL3130361 0.93 CA1 (0.43) CA2CA1HSD11B1NR1H2NR1I2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 120 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8759415-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-06-24 US claimed
US-20120291668-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-22 US claimed
US-8262961-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-11 US claimed
US-8128832-B2 Processes and materials for step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-06 US claimed
US-20080174051-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-24 US claimed
US-20080169268-A1 PROCESSES AND MATERIALS FOR STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-17 US claimed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US claimed
US-20070298176-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2007-12-27 US claimed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US claimed
US-20070051697-A1 Processes and materials for step and flash imprint lithography GLOBALFOUNDRIES INC. (KY) 2007-03-08 US claimed
CN-122085599-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
CN-122085598-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
CN-113253569-A Small molecule composition, photoresist composition and method for forming pattern on substrate 上海邃铸科技有限公司 2021-08-13 CN disclosed
US-10831102-B2 Photoactive polymer brush materials and EUV patterning using the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-11-10 US disclosed
CN-111788236-A Photoactive polymer brush materials and EUV patterning using the same 国际商业机器公司 2020-10-16 CN disclosed
US-20060063103-A1 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-03-23 US disclosed
US-20050239001-A1 use of a high activation energy chemically amplified photoresist (CARS) that is contacted with a low pH high saturation magnetic moment plating solution to form a magnetic head component that is essentially free of plating defects HITACHI GLOBAL STORAGE NETHERLANDS B.V. (NL) 2005-10-27 US disclosed
US-20050123852-A1 Method for patterning a low activation energy photoresist GLOBALFOUNDRIES U.S. INC. 2005-06-09 US disclosed
US-20050124774-A1 Low activation energy photoresists INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-06-09 US disclosed
US-20050112382-A1 Molecular photoresists containing nonpolymeric silsesquioxanes INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-05-26 US disclosed