Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 13/20 | 0.43 |
| ▸ | CA2 | P00918 | 13/20 | 0.43 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.38 |
| ▸ | NR1H2 | P55055 | 3/20 | 0.38 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.37 |
| ▸ | NR1H3 | Q13133 | 3/20 | 0.36 |
| ▸ | MMP1 | P03956 | 2/20 | 0.35 |
| ▸ | MMP2 | P08253 | 2/20 | 0.35 |
| ▸ | MMP9 | P14780 | 2/20 | 0.35 |
| ▸ | MMP8 | P22894 | 2/20 | 0.35 |
| ▸ | MMP13 | P45452 | 2/20 | 0.35 |
| ▸ | HTR6 | P50406 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL60138 | 0.98 | CA2 (0.44) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL60438 | 0.98 | CA2 (0.44) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL965542 | 0.98 | CA2 (0.44) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL4535203 | 0.98 | CA2 (0.44) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL965951 | 0.95 | CA1 (0.39) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL217002 | 0.95 | HTR6 (0.38) | CA1CA2HSD11B1NR1H2NR1H3 | |
| SCHEMBL3132394 | 0.92 | CA1 (0.42) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL1804334 | 0.92 | CA1 (0.42) | CA1CA2HSD11B1NR1H2NR1I2 | |
| SCHEMBL2437767 | 0.91 | HTR6 (0.38) | CA1CA2HSD11B1NR1H2NR1H3 | |
| SCHEMBL3144262 | 0.91 | HSD11B1 (0.42) | CA1CA2HSD11B1NR1H2NR1I2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 4295 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-26 | — | — | US | claimed |
| US-20260049180-A1 | FAST CURING, STICKY POLYMERS FOR MEDICAL USES | UNIV CALIFORNIA (US) | 2026-02-19 | — | — | US | claimed |
| US-20250377591-A1 | PHOTORESIST COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO LTD (KR) | 2025-12-11 | — | — | US | claimed |
| CN-119978604-A | Polymer film composition, polymer film, and laminate | 福斯特(滁州)新材料有限公司 | 2025-05-13 | — | — | CN | claimed |
| CN-113296359-B | Bottom layer composition and method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2025-05-02 | — | — | CN | claimed |
| US-12269925-B1 | Fast curing, biocompatible and biodegradable adhesives and sealants | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 2025-04-08 | — | — | US | claimed |
| CN-119463075-A | Poly (4-hydroxystyrene) -based block copolymer and preparation and application thereof | 微芯新材料(湖州)有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-111045296-B | UV patternable polymer blend for organic thin film transistor | 康宁股份有限公司 | 2024-12-27 | — | — | CN | claimed |
| CN-118684824-A | Positive chemical amplification photoresist resin, preparation method and photoresist | 万华化学集团股份有限公司 | 2024-09-24 | — | — | CN | claimed |
| US-20050145890-A1 | Polymer sacrificial light absorbing structure and method | GOODNER MICHAEL D (US) | 2005-07-07 | — | — | US | claimed |
| US-20050147915-A1 | Photoresist composition | MERCK PATENT GMBH (DE) | 2005-07-07 | — | — | US | claimed |
| US-6876017-B2 | Polymer sacrificial light absorbing structure and method | INTEL CORPORATION (US) | 2005-04-05 | — | — | US | claimed |
| US-20040161710-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-08-19 | — | — | US | claimed |
| US-20040157415-A1 | Polymer sacrificial light absorbing structure and method | INTEL CORPORATION | 2004-08-12 | — | — | US | claimed |
| US-20040009433-A1 | Pattern formation method | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. | 2004-01-15 | — | — | US | claimed |
| EP-1311908-A2 | PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF | CLARIANT INTERNATIONAL LTD. (CH) | 2003-05-21 | — | — | EP | claimed |
| US-6447980-B1 | POLY(MALEIC ANHYDRIDE-CO-T-BUTYL 5-NORBORNENE-2-CARBOXYLATE-CO-2-HYDROXYETHYL 5-NORBORNENE-2-CARBOXYLATE-CO-5-NORBORNENE-2-CARBOXYLIC ACID-CO-2-METHYL ADAMANTYL METHACRYLATE-CO-MEVALONIC LACTONE) AND ACID GENERATOR | CLARIANT FINANCE (BVI) LIMITED (VG) | 2002-09-10 | — | — | US | claimed |
| WO-2002006901-A2 | PHOTORESIST COMPOSITION FOR DEEP UV AND PROCESS THEREOF | CLARIANT INTERNATIONAL LTD (CH) | 2002-01-24 | — | — | WO | claimed |
| US-6235446-B1 | MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER | JSR CORPORATION (JP) | 2001-05-22 | — | — | US | claimed |