SCHEMBL965951

SCHEMBL965951

O=S(=O)(OS(c1ccccc1)(c1ccccc1)c1ccccc1)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 5/20 0.39
CA2 P00918 5/20 0.39
HSD11B1 P28845 1/20 0.39
NR1H2 P55055 6/20 0.38
NR1H3 Q13133 6/20 0.36
HTR6 P50406 1/20 0.35
NR1I2 O75469 1/20 0.35
APOBEC3G Q9HC16 1/20 0.34
ABCC9 O60706 1/20 0.34
ABCC8 Q09428 1/20 0.34
KCNJ11 Q14654 1/20 0.34
KCNJ8 Q15842 1/20 0.34
MEN1 O00255 1/20 0.34
CYP1A2 P05177 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
TSHR P16473 1/20 0.34
CYP2C19 P33261 1/20 0.34
KMT2A Q03164 1/20 0.34
ALDH1A1 P00352 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL51400 0.95 CA1 (0.43) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL60438 0.93 CA2 (0.44) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL965542 0.93 CA2 (0.44) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL4535203 0.93 CA2 (0.44) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL60138 0.93 CA2 (0.44) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL2437767 0.93 HTR6 (0.38) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL217002 0.93 HTR6 (0.38) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL1593709 0.91 HSD11B1 (0.40) CA1CA2HSD11B1NR1H2ABCC9
SCHEMBL5460846 0.91 HSD11B1 (0.43) CA1CA2HSD11B1NR1H2NR1H3
SCHEMBL962839 0.89 HSD11B1 (0.41) CA1CA2HSD11B1NR1H2NR1H3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 86 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9176381-B2 Positive type photosensitive resin composition CHEIL INDUSTRIES INC. (KR) 2015-11-03 US disclosed
EP-2244124-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-26 EP disclosed
EP-2244126-B1 Patterning process SHINETSU CHEMICAL CO (JP) 2015-08-19 EP disclosed
EP-2000851-B1 Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
EP-1582926-B1 Positive resist composition TOKYO OHKA KOGYO CO LTD (JP) 2015-04-01 EP disclosed
US-8968979-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-03 US disclosed
EP-2267533-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-22 EP disclosed
EP-2244125-B1 Resist composition SHINETSU CHEMICAL CO (JP) 2014-10-08 EP disclosed
US-8771921-B2 Negative resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-08 US disclosed
EP-2146245-B1 Resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2014-06-25 EP disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-7261994-B2 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-28 US disclosed
US-20070190448-A1 Positive-type resist composition for liquid immersion lithography and method for forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2007-08-16 US disclosed
EP-1736827-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-12-27 EP disclosed
US-20050227170-A1 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-13 US disclosed
EP-1582926-A2 Positive resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2005-10-05 EP disclosed
EP-0611998-B1 Positive-working radiation-sensitive mixture CLARIANT FINANCE BVI LTD (VG) 2000-08-02 EP disclosed
US-5843319-A Positive-working radiation-sensitive mixture HOECHST JAPAN LIMITED (JP) 1998-12-01 US disclosed
US-5525453-A MIXTURE OF POLYMERIC BINDER, COMPOUND HAVING ATLEAST ONE CLEAVABLE WITH AN ACID, A COMPOUND CAPABLE OF PRODUCING AN ACID UPON RADIATION, A BASIC AMMONIUM AND A BASIC SULFONIUM COMPOUND HOECHST JAPAN LIMITED (JP) 1996-06-11 US disclosed
EP-0611998-A2 Positive-working radiation-sensitive mixture HOECHST JAPAN LIMITED (JP) 1994-08-24 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST CA1 557/4885CA2 29/4885HSD11B1 2970/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.