SCHEMBL6091577

SCHEMBL6091577

O=[N+]([O-])CN1CCNCC1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNJ1 P48048 1/20 0.43
KCNH2 Q12809 1/20 0.43
ADRB1 P08588 1/20 0.37
SIRT6 Q8N6T7 1/20 0.37
KDM4E B2RXH2 3/20 0.36
MAPT P10636 2/20 0.36
ALDH1A1 P00352 2/20 0.36
TDP1 Q9NUW8 1/20 0.36
POLB P06746 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
CXCR4 P61073 2/20 0.34
SIGMAR1 Q99720 2/20 0.33
CHRM5 P08912 1/20 0.33
CHRM3 P20309 1/20 0.33
RECQL P46063 1/20 0.32
PDE4A P27815 1/20 0.32
PDE4B Q07343 1/20 0.32
PDE4C Q08493 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9973250 0.77 KCNJ1 (0.53) KCNJ1KCNH2ADRB1SIRT6KDM4E
SCHEMBL28112388 0.75 ALDH1A1 (0.51) KDM4EMAPTALDH1A1TDP1POLB
SCHEMBL14818234 0.71 SIRT6 (0.37) KCNJ1KCNH2SIRT6KDM4EALDH1A1
SCHEMBL2485079 0.69
SCHEMBL20377303 0.69 KDM4E (0.47) KCNJ1KCNH2KDM4EMAPTALDH1A1
SCHEMBL28035579 0.67 CHRM5 (0.42) KCNJ1KCNH2ADRB1SIRT6KDM4E
Methane SCHEMBL27938574 0.67 ADRB1 (0.41) KCNJ1KCNH2ADRB1SIRT6KDM4E
Hydrochloric Acid SCHEMBL9067551 0.67 ADRB1 (0.41) KCNJ1KCNH2ADRB1SIRT6KDM4E
SCHEMBL445571 0.66
SCHEMBL3646422 0.64 POLB (0.46) ALDH1A1TDP1POLBSMN1; SMN2MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9152049-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 US disclosed
US-9152049-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-10-06 US disclosed
WO-2014119698-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2014-08-07 WO disclosed
WO-2013154210-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, ELECTRONIC DEVICE MANUFACTURING METHOD USING THE SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-10-17 WO disclosed
WO-2013122264-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-08-22 WO disclosed
WO-2013062066-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-05-02 WO disclosed
WO-2013015444-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-31 WO disclosed
WO-2013002417-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 WO disclosed
US-20120156617-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
US-20120156617-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-06-21 US disclosed
WO-2011025065-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-03-03 WO disclosed
WO-2006032164-A1 1,3-SUBSTITUED-2-INDOLINONE DERIVATIVES, THE PREPARATION, THE COMPOSITION AND THE USE THEREOF BEIJING MOLECULE SCIENCE AND TECHNOLOGY CO., LTD. (CN) 2006-03-30 WO disclosed