Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 3/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 3/20 | 0.41 |
| ▸ | RAPGEF3 | O95398 | 1/20 | 0.39 |
| ▸ | KDM4E | B2RXH2 | 3/20 | 0.37 |
| ▸ | NPC1 | O15118 | 3/20 | 0.35 |
| ▸ | RAB9A | P51151 | 3/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.35 |
| ▸ | GAA | P10253 | 2/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | F2 | P00734 | 2/20 | 0.34 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6140516 | 0.90 | RAPGEF3 (0.39) | MAPTSMN1; SMN2RAPGEF3KDM4ENPC1 | |
| SCHEMBL6140422 | 0.87 | KMT2A (0.39) | MAPTSMN1; SMN2RAPGEF3KDM4ENPC1 | |
| SCHEMBL6140432 | 0.83 | RORC (0.40) | MAPTSMN1; SMN2RAPGEF3KDM4ENPC1 | |
| SCHEMBL6140143 | 0.83 | RORC (0.40) | MAPTSMN1; SMN2RAPGEF3KDM4ENPC1 | |
| SCHEMBL6140783 | 0.81 | KDM4E (0.43) | MAPTSMN1; SMN2KDM4ENPC1RAB9A | |
| SCHEMBL6140558 | 0.80 | KDM4E (0.42) | MAPTSMN1; SMN2KDM4ENPC1RAB9A | |
| SCHEMBL6140223 | 0.79 | RAB9A (0.41) | SMN1; SMN2RAPGEF3NPC1RAB9ATDP1 | |
| SCHEMBL8323037 | 0.79 | PSEN1 (0.42) | MAPTGAAPTPN1 | |
| SCHEMBL6140092 | 0.78 | POLB (0.41) | MAPTSMN1; SMN2KDM4ENPC1RAB9A | |
| SCHEMBL6140499 | 0.78 | POLB (0.41) | MAPTSMN1; SMN2KDM4ENPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6955939-B1 | Memory element formation with photosensitive polymer dielectric | ADVANCED MICRO DEVICES, INC. (US) | 2005-10-18 | — | — | US | disclosed |
| US-6878961-B2 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. (US) | 2005-04-12 | — | — | US | disclosed |
| US-20050045877-A1 | PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-03-03 | — | — | US | disclosed |
| US-6825060-B1 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. | 2004-11-30 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| US-5847218-A | Sulfonium salts and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-08 | — | — | US | disclosed |