SCHEMBL6140686

SCHEMBL6140686

Cc1ccc(S(=O)(=O)OS(c2cccnc2)(c2cccnc2)c2cccnc2)c(C)c1

nearest known ligand 0.50

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
ALPL P05186 3/20 0.43
NAMPT P43490 1/20 0.43
ALDH1A1 P00352 4/20 0.42
MAPT P10636 2/20 0.42
KDM4E B2RXH2 1/20 0.42
F2 P00734 1/20 0.42
TSHR P16473 1/20 0.41
KMT2A Q03164 2/20 0.41
GAA P10253 1/20 0.41
NAPRT Q6XQN6 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.39
MAPK1 P28482 1/20 0.39
HTR6 P50406 1/20 0.38
POLB P06746 1/20 0.38
NR3C1 P04150 1/20 0.38
LMNA P02545 2/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140212 0.89 NAMPT (0.39) ALPLNAMPTALDH1A1MAPTKDM4E
SCHEMBL6140229 0.82 LMNA (0.43) NAMPTALDH1A1TSHRGAASMN1; SMN2
SCHEMBL6140071 0.81 LMNA (0.47) ALDH1A1MAPTKMT2ANAPRTSMN1; SMN2
SCHEMBL2326884 0.75 ALDH1A1 (0.54) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL6140364 0.75 NAPRT (0.52) NAMPTALDH1A1MAPTKDM4ENAPRT
SCHEMBL6140123 0.74 ALDH1A1 (0.46) ALDH1A1MAPTKDM4EF2KMT2A
SCHEMBL6140865 0.74 ALDH1A1 (0.39) ALDH1A1MAPTKMT2ANAPRTMAPK1
SCHEMBL6140372 0.74 ALDH1A1 (0.39) ALDH1A1MAPTKMT2ANAPRTMAPK1
SCHEMBL6140311 0.72 ALDH1A1 (0.42) ALDH1A1MAPTKDM4EF2TSHR
SCHEMBL2220142 0.71 ALDH1A1 (0.51) ALDH1A1MAPTKDM4EF2TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed