SCHEMBL6140212

SCHEMBL6140212

Cc1ccc(S(=O)(=O)OS(c2ccc(OC(C)(C)C)cc2)(c2ccc(OC(C)(C)C)cc2)c2cccnc2)c(C)c1

nearest known ligand 0.42

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
NAMPT P43490 2/20 0.39
ALPL P05186 2/20 0.36
KEAP1 Q14145 1/20 0.36
NFE2L2 Q16236 1/20 0.36
LMNA P02545 4/20 0.36
ALDH1A1 P00352 5/20 0.35
MAPT P10636 2/20 0.35
KDM4E B2RXH2 1/20 0.35
F2 P00734 1/20 0.35
TSHR P16473 1/20 0.35
HTR6 P50406 1/20 0.34
GAA P10253 1/20 0.34
KMT2A Q03164 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140686 0.89 ALPL (0.43) NAMPTALPLLMNAALDH1A1MAPT
SCHEMBL6140372 0.88 ALDH1A1 (0.39) KEAP1NFE2L2LMNAALDH1A1MAPT
SCHEMBL6140865 0.88 ALDH1A1 (0.39) KEAP1NFE2L2LMNAALDH1A1MAPT
SCHEMBL6140229 0.85 LMNA (0.43) NAMPTLMNAALDH1A1TSHRGAA
SCHEMBL6139851 0.83 KEAP1 (0.41) KEAP1NFE2L2LMNAALDH1A1MAPT
SCHEMBL6140495 0.81 KDM4E (0.37) LMNAALDH1A1MAPTKDM4EF2
SCHEMBL6140085 0.81 KDM4E (0.37) LMNAALDH1A1MAPTKDM4EF2
SCHEMBL6140261 0.80 LMNA (0.39) LMNAALDH1A1MAPTKDM4EF2
SCHEMBL6140367 0.80 LMNA (0.39) LMNAALDH1A1MAPTKDM4EF2
SCHEMBL6140787 0.80 ALDH1A1 (0.45) NAMPTALPLKEAP1NFE2L2LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed