SCHEMBL6140071

SCHEMBL6140071

Cc1ccc(S(=O)(=O)OS(c2cccnc2)(c2cccnc2)c2cccnc2)cc1

nearest known ligand 0.47

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
LMNA P02545 3/20 0.47
MAPT P10636 2/20 0.47
POLB P06746 1/20 0.47
NAPRT Q6XQN6 1/20 0.46
EGFR P00533 1/20 0.46
PTGS2 P35354 1/20 0.46
ALDH1A1 P00352 6/20 0.44
KMT2A Q03164 3/20 0.44
MEN1 O00255 2/20 0.44
TDP1 Q9NUW8 1/20 0.44
MAPK1 P28482 1/20 0.44
KEAP1 Q14145 1/20 0.42
NFE2L2 Q16236 1/20 0.42
SMN1; SMN2 Q16637 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140865 0.87 ALDH1A1 (0.39) LMNAMAPTPOLBNAPRTEGFR
SCHEMBL6140372 0.87 ALDH1A1 (0.39) LMNAMAPTPOLBNAPRTEGFR
SCHEMBL6140364 0.87 NAPRT (0.52) MAPTNAPRTPTGS2ALDH1A1TDP1
SCHEMBL6140450 0.84 NAMPT (0.44) LMNAMAPTPOLBNAPRTALDH1A1
SCHEMBL6140392 0.82 LMNA (0.39) LMNAMAPTPOLBALDH1A1KMT2A
SCHEMBL6140602 0.82 LMNA (0.39) LMNAMAPTPOLBALDH1A1KMT2A
SCHEMBL6140686 0.81 ALPL (0.43) LMNAMAPTPOLBNAPRTALDH1A1
SCHEMBL6140361 0.80 RAB9A (0.46) LMNAMAPTALDH1A1KMT2AMEN1
SCHEMBL6140933 0.80 RAB9A (0.46) LMNAMAPTALDH1A1KMT2AMEN1
SCHEMBL2955938 0.80 VDR (0.49) LMNAALDH1A1KMT2AMEN1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed