Acrylic Acid

Acrylic Acid

SCHEMBL6303263

C=C(C=C(C)C(=O)O)C(=O)OC.C=CC(=O)O.C=CC(=O)OC1(CC)C2CC3CC(C2)CC1C3

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6297107 0.98
Acrylic Acid SCHEMBL6298175 0.87
Methacrylic Acid SCHEMBL6303259 0.85 ALOX15 (0.30)
SCHEMBL6298835 0.84
SCHEMBL6303272 0.84 HCAR2 (0.30)
Acrylic Acid Methyl Ester SCHEMBL6303271 0.84 HSD11B1 (0.32)
Methacrylic Acid SCHEMBL6297106 0.83 HSD11B1 (0.30)
Methacrylic Acid SCHEMBL6297147 0.80 ALDH1A1 (0.37)
Acrylic Acid SCHEMBL6298827 0.79 ALDH1A1 (0.39)
SCHEMBL43549 0.79 TSHR (0.34)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6908729-B2 Amplified photoresist; radiation with ultraviolet radiation MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-06-21 US disclosed
US-20030082486-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-05-01 US disclosed