Known targets — ChEMBL curated mechanism
AGTR1DHFRGABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTNR3C2PBP2XPTGS1PTGS2VKORC1blablaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAftsImrcAmrcBmrdApbp1apbp1bpbp2apbp2bpbp3polthyA
The experimentally established mechanism targets of Potassium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA4 | P22748 | 5/20 | 0.48 |
| ▸ | CTSL | P07711 | 1/20 | 0.44 |
| ▸ | CA2 | P00918 | 1/20 | 0.42 |
| ▸ | SLC22A16 | Q86VW1 | 1/20 | 0.36 |
| ▸ | CPT2 | P23786 | 1/20 | 0.33 |
| ▸ | CPT1A | P50416 | 1/20 | 0.33 |
| ▸ | CASP1 | P29466 | 1/20 | 0.30 |
| ▸ | FAHD1 | Q6P587 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Potassium Ion SCHEMBL31206361 | 0.97 | CA4 (0.46) | CA4CTSLCA2SLC22A16CPT2 | |
| Potassium Ion SCHEMBL31206140 | 0.95 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| Lithium Ion SCHEMBL29028816 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| SCHEMBL7899821 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| SCHEMBL7899819 | 0.94 | CTSL (0.50) | CA4CTSLCA2SLC22A16CPT2 | |
| SCHEMBL6741776 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| Zinc Ion SCHEMBL6051610 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| Silver SCHEMBL6741767 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| SCHEMBL29199237 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 | |
| SCHEMBL1546186 | 0.94 | CA4 (0.48) | CA4CTSLCA2SLC22A16CPT2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2020045454-A1 | RUBBER COMPOSITION, METAL-RUBBER COMPOSITE MOLDED BODY AND METHOD FOR PRODUCING METAL-RUBBER COMPOSITE MOLDED BODY | 住友化学株式会社 | 2020-03-05 | — | — | WO | disclosed |
| US-8960882-B2 | Ink jet recording method, ink set, and recorded article | SEIKO EPSON CORPORATION (JP) | 2015-02-24 | — | — | US | disclosed |
| US-8940088-B2 | Aqueous ink composition and recorded article formed by using the same | SEIKO EPSON CORPORATION (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8574356-B2 | Ink composition and recording method | SEIKO EPSON CORPORATION (JP) | 2013-11-05 | — | — | US | disclosed |
| US-20120249668-A1 | INK JET RECORDING METHOD, INK SET, AND RECORDED ARTICLE | SEIKO EPSON CORPORATION (JP) | 2012-10-04 | — | — | US | disclosed |
| US-8173050-B2 | Conductive pattern formation ink, conductive pattern and wiring substrate | SEIKO EPSON CORPORATION (JP) | 2012-05-08 | — | — | US | disclosed |
| US-8119034-B2 | Conductive pattern forming ink, conductive pattern, and wiring substrate | SEIKO EPSON CORPORATION (JP) | 2012-02-21 | — | — | US | disclosed |
| US-8119036-B2 | Conductive pattern forming ink, conductive pattern, and wiring substrate | SEIKO EPSON CORPORATION (JP) | 2012-02-21 | — | — | US | disclosed |
| US-8119035-B2 | Conductive pattern forming ink, conductive pattern, and wiring substrate | SEIKO EPSON CORPORATION (JP) | 2012-02-21 | — | — | US | disclosed |
| US-8066912-B2 | Conductive pattern forming ink, conductive pattern, and wiring substrate | SEIKO EPSON CORPORATION (JP) | 2011-11-29 | — | — | US | disclosed |
| US-20090148676-A1 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090148671-A1 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090145519-A1 | FILLING LIQUID | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090146113-A1 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090145639-A1 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090145638-A1 | CONDUCTIVE PATTERN FORMATION INK, CONDUCTIVE PATTERN AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090145640-A1 | CONDUCTIVE PATTERN FORMATION INK, METHOD OF FORMING CONDUCTIVE PATTERN, CONDUCTIVE PATTERN AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090148680-A1 | CONDUCTIVE PATTERN FORMING INK, CONDUCTIVE PATTERN, AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-06-11 | — | — | US | disclosed |
| US-20090110889-A1 | CONDUCTIVE PATTERN FORMATION INK, CONDUCTIVE PATTERN AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-04-30 | — | — | US | disclosed |
| US-20090090272-A1 | CONDUCTIVE PATTERN FORMATION INK, CONDUCTIVE PATTERN AND WIRING SUBSTRATE | SEIKO EPSON CORPORATION (JP) | 2009-04-09 | — | — | US | disclosed |