SCHEMBL382979

SCHEMBL382979

O=C1C(c2ccccc2)=C(c2ccccc2)C(=O)N1OS(=O)(=O)C(F)(F)F

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 4/20 0.41
MAPT P10636 6/20 0.41
KMT2A Q03164 5/20 0.41
ALDH1A1 P00352 5/20 0.41
HPGD P15428 5/20 0.41
KDM4E B2RXH2 4/20 0.41
PDE4B Q07343 1/20 0.39
MEN1 O00255 3/20 0.38
PARL Q9H300 2/20 0.38
HTT P42858 3/20 0.36
NPSR1 Q6W5P4 2/20 0.35
MITF O75030 1/20 0.35
VDR P11473 1/20 0.35
PTGS1 P23219 3/20 0.34
LMNA P02545 2/20 0.33
GAA P10253 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CYP1A2 P05177 1/20 0.33
CYP3A4 P08684 1/20 0.33
XBP1 P17861 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3858914 0.85 ALDH1A1 (0.41) MAPTKMT2AALDH1A1HPGDKDM4E
SCHEMBL2895599 0.85 PIK3CD (0.36) PTGS2MAPTKMT2AALDH1A1HPGD
SCHEMBL2894844 0.84 CA1 (0.37) PTGS2MAPTKMT2AALDH1A1HPGD
SCHEMBL13098336 0.82 PTGS2 (0.35) PTGS2MAPTKMT2AALDH1A1HPGD
SCHEMBL29368754 0.82 ALDH1A1 (0.61) MAPTKMT2AALDH1A1HPGDKDM4E
SCHEMBL64157 0.82 ALDH1A1 (0.61) MAPTKMT2AALDH1A1HPGDKDM4E
SCHEMBL28737210 0.82 PTGS2 (0.39) PTGS2MAPTKMT2AALDH1A1HPGD
SCHEMBL31415662 0.79 PTGS2 (0.44) PTGS2MAPTKMT2AALDH1A1HPGD
SCHEMBL9130722 0.79 PTGS2 (0.47) PTGS2MAPTKMT2AALDH1A1HPGD
SCHEMBL382760 0.77 KMT2A (0.47) PTGS2MAPTKMT2AALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 980 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101154041-B Radiation sensitive resin composition, and formation of interlayer insulating film and microlens JSR CORP 2011-11-23 CN claimed
US-20040253547-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-12-16 US claimed
US-6235446-B1 MIXTURE OF P-HYDROXYSTYRENE, ACRYLATED ESTER JSR CORPORATION (JP) 2001-05-22 US claimed
US-5994022-A BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID JSR CORPORATION (JP) 1999-11-30 US claimed
EP-0613050-B1 Universal negative tone photoresist IBM (US) 1997-03-26 EP claimed
CN-122043858-A EUV patterned resist formation method 亚历克斯·P·G·罗宾逊 2026-05-15 CN disclosed
US-20260077385-A1 FILM FORMING METHOD, CURABLE COMPOSITION, AND ARTICLE MANUFACTURING METHOD CANON KABUSHIKI KAISHA (JP) 2026-03-19 US disclosed
US-12570872-B2 Acrylic polymerized polysiloxane, composition comprising the same, and cured film produced using the same MERCK PATENT GMBH (DE) 2026-03-10 US disclosed
US-20260042932-A1 COMPOSITION, PATTERN FORMING METHOD, AND ARTICLE MANUFACTURING METHOD CANON KK (JP) 2026-02-12 US disclosed
US-20250362597-A1 RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-11-27 US disclosed
US-12449731-B2 Photosensitive resin composition, method for producing resist pattern film, and method for producing plated formed product ISR CORPORATION (JP) 2025-10-21 US disclosed
US-20250321485-A1 RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2025-10-16 US disclosed
EP-0388343-B1 Chemically amplified photoresist IBM (US) 1996-07-17 EP disclosed
EP-0698230-A1 CHEMICALLY AMPLIFIED PHOTORESIST International Business Machines Corporation (US) 1996-02-28 EP disclosed
EP-0698230-A4 CHEMICALLY AMPLIFIED PHOTORESIST IBM (US) 1995-10-24 EP disclosed
EP-0660187-A1 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1995-06-28 EP disclosed
EP-0613050-A2 Universal negative tone photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-08-31 EP disclosed
WO-1994010608-A9 CHEMICALLY AMPLIFIED PHOTORESIST 1994-07-21 WO disclosed
WO-1994010608-A1 CHEMICALLY AMPLIFIED PHOTORESIST INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 1994-05-11 WO disclosed
EP-0388343-A2 Chemically amplified photoresist International Business Machines Corporation (US) 1990-09-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260077385-A1 FILM FORMING METHOD, CURABLE COMPOSITION, AND ARTICLE MANUFACTURING METHOD EEF1D, RHOA, YWHAH PTGS2 3216/4885MAPT 130/4885KMT2A 1496/4885
US-20260042932-A1 COMPOSITION, PATTERN FORMING METHOD, AND ARTICLE MANUFACTURING METHOD SMCHD1, PIM1, PIM2 PTGS2 3917/4885MAPT 203/4885KMT2A 407/4885
US-12570872-B2 Acrylic polymerized polysiloxane, composition comprising the same, and cured film produced using the same SMC1A, SMC2, SMC3 PTGS2 1153/4885MAPT 4281/4885KMT2A 287/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.