Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 4/20 | 0.46 |
| ▸ | TSHR | P16473 | 1/20 | 0.46 |
| ▸ | HTR6 | P50406 | 1/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.42 |
| ▸ | TP53 | P04637 | 2/20 | 0.42 |
| ▸ | LMNA | P02545 | 2/20 | 0.42 |
| ▸ | MAPT | P10636 | 2/20 | 0.42 |
| ▸ | NPC1 | O15118 | 1/20 | 0.42 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.42 |
| ▸ | PRNP | P04156 | 1/20 | 0.42 |
| ▸ | XBP1 | P17861 | 1/20 | 0.42 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.42 |
| ▸ | RAB9A | P51151 | 1/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.42 |
| ▸ | ATM | Q13315 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 2/20 | 0.41 |
| ▸ | CA2 | P00918 | 2/20 | 0.41 |
| ▸ | MMP1 | P03956 | 1/20 | 0.41 |
| ▸ | MMP2 | P08253 | 1/20 | 0.41 |
| ▸ | MMP9 | P14780 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14600187 | 0.89 | MAPT (0.47) | SMN1; SMN2ALDH1A1LMNAMAPTNPC1 | |
| SCHEMBL3169821 | 0.89 | PKM (0.46) | TSHRALDH1A1MAPK1KMT2ACA1 | |
| SCHEMBL21838871 | 0.89 | MAPT (0.47) | SMN1; SMN2ALDH1A1LMNAMAPTNPC1 | |
| SCHEMBL11973784 | 0.89 | MAPT (0.44) | SMN1; SMN2ALDH1A1LMNAMAPTMAPK1 | |
| SCHEMBL3193127 | 0.88 | SMN1; SMN2 (0.40) | SMN1; SMN2TSHRHTR6ALDH1A1TP53 | |
| SCHEMBL10072231 | 0.86 | ALDH1A1 (0.40) | SMN1; SMN2TSHRHTR6ALDH1A1TP53 | |
| SCHEMBL3203604 | 0.85 | HSD11B1 (0.39) | SMN1; SMN2TSHRHTR6ALDH1A1TP53 | |
| SCHEMBL3181063 | 0.84 | KAT6A (0.38) | SMN1; SMN2TSHRALDH1A1TP53LMNA | |
| SCHEMBL3166497 | 0.84 | KMT2A (0.48) | SMN1; SMN2ALDH1A1RAB9AKMT2ACA1 | |
| SCHEMBL30137813 | 0.84 | KAT6A (0.41) | ALDH1A1LMNAMAPTKMT2ACA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 3850 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-121873631-B | Spin-on carbon composition, semiconductor preparation method and semiconductor device | Jiageng Innovation Laboratory (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122011922-A | Bottom anti-reflection coating composition and preparation and application thereof | 嘉庚创新实验室 | 2026-05-12 | — | — | CN | claimed |
| EP-4607278-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | Ycchem Co., Ltd. (KR) | 2025-08-27 | — | — | EP | claimed |
| US-20250199405-A1 | CHEMICALLY-AMPLIFIED POSITIVE PHOTORESIST COMPOSITION FOR PATTERN PROFILE IMPROVEMENT AND ETCH RESISTANCE ENHANCEMENT | YCCHEM CO., LTD. (KR) | 2025-06-19 | — | — | US | claimed |
| CN-119998727-A | Chemically amplified positive resist composition for improving pattern profile and enhancing etch resistance | YC化学制品株式会社 | 2025-05-13 | — | — | CN | claimed |
| CN-114153124-B | Composition for ArF immersed photoresist top layer coating and preparation method thereof | 中节能万润股份有限公司 | 2025-04-22 | — | — | CN | claimed |
| CN-119165732-B | Photoresist bottom anti-reflection coating polymer, preparation method, composition and application | 中节能万润股份有限公司 | 2025-01-28 | — | — | CN | claimed |
| US-20250021002-A1 | BOTTOM ANTI-REFLECTIVE COATING FOR DEEP ULTRAVIOLET LITHOGRAPHY, PREPARATION METHOD THEREFOR AND USE THEREOF | CHINA ADVANCED LITHOGRAPHIC MATERIAL TECHNOLOGY CO. LTD. (CN) | 2025-01-16 | — | — | US | claimed |
| CN-119165732-A | Photoresist bottom anti-reflection coating polymer, preparation method, composition and application | 中节能万润股份有限公司 | 2024-12-20 | — | — | CN | claimed |
| CN-114637165-B | Composition for photoresist top layer coating and polymer preparation method thereof | 中节能万润股份有限公司 | 2024-09-17 | — | — | CN | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-20010036589-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | MERCK PATENT GMBH (DE) | 2001-11-01 | — | — | US | claimed |
| EP-0827970-B1 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT FINANCE BVI LTD (VG) | 2001-09-26 | — | — | EP | claimed |
| US-6165677-A | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2000-12-26 | — | — | US | claimed |
| EP-0989459-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | Clariant Finance (BVI) Limited (VG) | 2000-03-29 | — | — | EP | claimed |
| US-5994022-A | BECOMES SOLUBLE IN ALKALI DEVELOPING SOLUTION BY ACTION OF AN ACID | JSR CORPORATION (JP) | 1999-11-30 | — | — | US | claimed |
| US-5916728-A | RESIN WHICH IS CONVERTED TO ALKALI-SOLUBLE FROM ALKALI-INSOLUBLE OR ALKALI-SLIGHTLY SOLUBLE BY THE ACTION OF AN ACID, ACID GENERATOR AND TERTIARY AMINE COMPOUND HAVING AN ALIPHATIC HYDROXYL GROUP. | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 1999-06-29 | — | — | US | claimed |
| US-5852128-A | Acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | CLARIANT AG (CH) | 1998-12-22 | — | — | US | claimed |
| EP-0827970-A2 | New acid-labile group protected hydroxystyrene polymers or copolymers thereof and their application to radiation sensitive materials | Clariant AG (CH) | 1998-03-11 | — | — | EP | claimed |
| US-5338641-A | Positive-working radiation-sensitive mixture and copying material produced therefrom comprising an α,α-bis(sulfonyl) diazo methane as an acid forming compound | HOECHST AKTIENGESELLSCHAFT (DE) | 1994-08-16 | — | — | US | claimed |