SCHEMBL6543473

SCHEMBL6543473

CS(=O)(=O)C(S(C)(=O)=O)S(=O)(=O)c1ccc(Cl)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.50
CYP3A4 P08684 1/20 0.50
MAPK1 P28482 1/20 0.50
PSEN1 P49768 2/20 0.49
PSEN2 P49810 2/20 0.49
APH1B Q8WW43 2/20 0.49
NCSTN Q92542 2/20 0.49
APH1A Q96BI3 2/20 0.49
PSENEN Q9NZ42 2/20 0.49
CA1 P00915 5/20 0.47
CA2 P00918 5/20 0.47
CA12 O43570 3/20 0.47
CA3 P07451 3/20 0.47
CA4 P22748 3/20 0.47
CA6 P23280 3/20 0.47
CA5A P35218 3/20 0.47
CA7 P43166 3/20 0.47
CA9 Q16790 3/20 0.47
CA13 Q8N1Q1 3/20 0.47
CA14 Q9ULX7 3/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL26343874 0.80 GAA (0.52) ALDH1A1CYP3A4CA1CA2CA12
SCHEMBL8117812 0.78 PSEN1 (0.45) PSEN1PSEN2APH1BNCSTNAPH1A
SCHEMBL6544686 0.78 TDP1 (0.50) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL217302 0.77 ALDH1A1 (0.54) ALDH1A1CYP3A4MAPK1PSEN1PSEN2
SCHEMBL6544186 0.77 HTR6 (0.46) ALDH1A1CA1CA2CA12CA3
SCHEMBL536323 0.77 ALDH1A1 (0.54) ALDH1A1CYP3A4MAPK1PSEN1PSEN2
SCHEMBL24360888 0.76 GAA (0.52) ALDH1A1CYP3A4CA1CA2CA12
SCHEMBL21515839 0.74 CA1 (0.52) ALDH1A1CYP3A4MAPK1PSEN1PSEN2
SCHEMBL265232 0.74 PTGS2 (0.69) ALDH1A1CYP3A4MAPK1CA1CA2
SCHEMBL6543481 0.74 CA2 (0.52) ALDH1A1CA1CA2CA12CA3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-5372914-A Pattern forming method KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-13 US disclosed
US-5348838-A Photoresist KABUSHIKI KAISHA TOSHIBA (JP) 1994-09-20 US disclosed