SCHEMBL6544686

SCHEMBL6544686

O=S(=O)(c1ccccc1)C(S(=O)(=O)c1ccccc1)S(=O)(=O)c1ccc(Cl)cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.50
ALDH1A1 P00352 2/20 0.50
CYP3A4 P08684 1/20 0.50
MAPK1 P28482 1/20 0.50
CA12 O43570 1/20 0.46
CA1 P00915 1/20 0.46
CA2 P00918 1/20 0.46
CA3 P07451 1/20 0.46
CA4 P22748 1/20 0.46
CA6 P23280 1/20 0.46
CA5A P35218 1/20 0.46
CA7 P43166 1/20 0.46
CA9 Q16790 1/20 0.46
CA13 Q8N1Q1 1/20 0.46
CA14 Q9ULX7 1/20 0.46
CA5B Q9Y2D0 1/20 0.46
KIF18A Q8NI77 1/20 0.45
FLT1 P17948 1/20 0.44
FLT4 P35916 1/20 0.44
KDR P35968 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4076634 0.86 HTR6 (0.55) TDP1ALDH1A1CA12CA1CA2
SCHEMBL9412338 0.79 ALDH1A1 (0.56) TDP1ALDH1A1CYP3A4MAPK1CA12
SCHEMBL250144 0.79 ALDH1A1 (0.80) TDP1ALDH1A1CYP3A4MAPK1CA12
SCHEMBL6543930 0.78 GAA (0.50) TDP1ALDH1A1CYP3A4CA12CA1
SCHEMBL8119090 0.78 PKM (0.53) ALDH1A1MAPK1L3MBTL1HSD17B10MEN1
SCHEMBL6543473 0.78 ALDH1A1 (0.50) ALDH1A1CYP3A4MAPK1CA12CA1
SCHEMBL27733606 0.76 ALDH1A1 (0.73) TDP1ALDH1A1CYP3A4MAPK1CA12
SCHEMBL1759743 0.76 TSHR (0.73) TDP1ALDH1A1CYP3A4MAPK1CA12
P-Chlorobenzenesulfonamide SCHEMBL7527510 0.76 CA12 (0.82) TDP1ALDH1A1CYP3A4MAPK1CA12
SCHEMBL6544697 0.75 ALDH1A1 (0.58) ALDH1A1MAPK1CA12CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed