SCHEMBL6544145

SCHEMBL6544145

CS(=O)(=O)CS(=O)(=O)c1ccccc1

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PSIP1 O75475 1/20 0.62
HSD11B1 P28845 5/20 0.48
POLB P06746 1/20 0.47
HTR6 P50406 1/20 0.46
ALDH1A1 P00352 3/20 0.46
HSD17B10 Q99714 2/20 0.46
TP53 P04637 1/20 0.46
HTT P42858 1/20 0.46
PLCG1 P19174 1/20 0.43
SMN1; SMN2 Q16637 2/20 0.42
TDP1 Q9NUW8 1/20 0.42
CA12 O43570 1/20 0.42
CA1 P00915 1/20 0.42
CA2 P00918 1/20 0.42
CA3 P07451 1/20 0.42
CA4 P22748 1/20 0.42
CA6 P23280 1/20 0.42
CA5A P35218 1/20 0.42
CA7 P43166 1/20 0.42
PLA2G7 Q13093 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL64761 0.85 PSIP1 (0.67) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL208421 0.79 ALDH1A1 (0.59) ALDH1A1PLCG1SMN1; SMN2CA12CA1
SCHEMBL29048488 0.77 ALDH1A1 (0.50) ALDH1A1HSD17B10PLCG1CA12CA1
SCHEMBL180713 0.77 PSIP1 (1.00) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL5013934 0.76 PSIP1 (0.56) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL15301816 0.76 CA2 (0.63) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL11815895 0.76 PSIP1 (0.56) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL15301446 0.76 PSIP1 (0.56) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL11816161 0.76 PSIP1 (0.56) PSIP1HSD11B1POLBHTR6ALDH1A1
SCHEMBL29068356 0.76 PLCG1 (0.44) ALDH1A1PLCG1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed
US-5372914-A Pattern forming method KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-13 US disclosed
US-5348838-A Photoresist KABUSHIKI KAISHA TOSHIBA (JP) 1994-09-20 US disclosed