SCHEMBL6562956

SCHEMBL6562956

C#C[Si](C#C)(OC)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.33
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
POLB P06746 1/20 0.30
PDE2A O00408 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6562663 0.77 CA4 (0.33) CA4ESR1ESR2POLBPDE2A
SCHEMBL6564325 0.77 LTA4H (0.31)
SCHEMBL6562661 0.74 CES2 (0.36) ESR1
SCHEMBL6564089 0.72 APP (0.42)
SCHEMBL648335 0.72 CA4 (0.41) CA4ESR1ESR2POLB
SCHEMBL646249 0.69 CA4 (0.43) CA4ESR1ESR2POLB
SCHEMBL935728 0.69 ESR1 (0.39) ESR1ESR2POLB
SCHEMBL9732848 0.69 ESR1 (0.39) ESR1ESR2
SCHEMBL587376 0.69 ESR1 (0.39) ESR1ESR2
SCHEMBL9444693 0.69 ESR1 (0.39) ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115181223-A Low-gloss matte auxiliary agent, preparation method thereof and formed body 铨盛聚碳科技股份有限公司 2022-10-14 CN disclosed
EP-1122746-B1 Composition for film formation and insulating film JSR CORP (JP) 2004-09-22 EP disclosed
US-6468589-B2 A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING JSR CORPORATION (JP) 2002-10-22 US disclosed
US-20010012870-A1 Composition for film formation and insulating film JSR CORPORATION (JP) 2001-08-09 US disclosed
EP-1122746-A1 Composition for film formation and insulating film JSR Corporation (JP) 2001-08-08 EP disclosed