Predicted protein targets (top 15)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 8/20 | 0.50 |
| ▸ | TSHR | P16473 | 5/20 | 0.47 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.47 |
| ▸ | TP53 | P04637 | 3/20 | 0.38 |
| ▸ | MAPT | P10636 | 2/20 | 0.38 |
| ▸ | HPGD | P15428 | 2/20 | 0.38 |
| ▸ | MEN1 | O00255 | 2/20 | 0.38 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.38 |
| ▸ | HIF1A | Q16665 | 2/20 | 0.38 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.38 |
| ▸ | PPARG | P37231 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.36 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.34 |
| ▸ | GLA | P06280 | 1/20 | 0.32 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12769066 | 0.82 | ALDH1A1 (0.45) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL11651010 | 0.82 | ALDH1A1 (0.55) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL12478071 | 0.82 | ALDH1A1 (0.45) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL5326044 | 0.79 | ALDH1A1 (0.42) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL8344189 | 0.79 | ALDH1A1 (0.42) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL4369287 | 0.78 | ALDH1A1 (0.41) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL23175183 | 0.77 | — | — | |
| SCHEMBL635723 | 0.77 | ALDH1A1 (0.46) | ALDH1A1TSHRMAPK1TP53MAPT | |
| SCHEMBL39030 | 0.77 | — | — | |
| SCHEMBL3458576 | 0.77 | ALDH1A1 (0.46) | ALDH1A1TSHRMAPK1TP53MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 431 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023150669-A1 | ANTIMICROBIAL WATER-ABSORBENT CROSS-LINKED POLYMERIC POLYCARBOXYLIC ACID AND RELATED METHODS | ECOVIA RENEWABLES INC. (US) | 2023-08-10 | — | — | WO | claimed |
| US-7417104-B2 | Porous film-forming composition, patterning process, and porous sacrificial film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-08-26 | — | — | US | claimed |
| US-20240192591-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-13 | — | — | US | disclosed |
| US-20240184199-A1 | Onium Salt, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-06 | — | — | US | disclosed |
| US-12001139-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-20240176235-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-30 | — | — | US | disclosed |
| US-20240176238-A1 | SULFONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-30 | — | — | US | disclosed |
| US-20240176237-A1 | Onium Salt, Resist Composition, And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-30 | — | — | US | disclosed |
| US-11994799-B2 | Negative resist composition and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-28 | — | — | US | disclosed |
| US-20240160101-A1 | RESIST COMPOSITION AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-05-16 | — | — | US | disclosed |
| US-20240152047-A1 | HIGH REFRACTIVE INDEX MATERIALS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2024-05-09 | — | — | US | disclosed |
| US-7202013-B2 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-04-10 | — | — | US | disclosed |
| US-20060204891-A1 | Etching resistance; novolak resin having a fluorene or tetrahydrospirobiindene structure, an organic solvent, an acid generator, and a crosslinker, optionally combined with an intermediate layer having an antireflective effect | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-09-14 | — | — | US | disclosed |
| US-20060188809-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-08-24 | — | — | US | disclosed |
| US-20060019195-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2006-01-26 | — | — | US | disclosed |
| US-20060014106-A1 | Photoresist undercoat-forming material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2006-01-19 | — | — | US | disclosed |
| US-20050282091-A1 | Patterning process and undercoat-forming material | SHIN-ETSU CHEMICAL CO.,LTD. (JP) | 2005-12-22 | — | — | US | disclosed |
| US-20050277756-A1 | Porous film-forming composition, patterning process, and porous sacrificial film | SHIN-ETSU CHEMICAL CO., LTD. | 2005-12-15 | — | — | US | disclosed |
| US-20040253461-A1 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-16 | — | — | US | disclosed |
| US-20040247900-A1 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO. LTD. (JP) | 2004-12-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240184199-A1 | Onium Salt, Resist Composition, And Patterning Process | LBR, ZYX, SCN1B | ALDH1A1 4132/4885TSHR 1419/4885MAPK1 1398/4885 |
| US-20240176238-A1 | SULFONIUM SALT, RESIST COMPOSITION AND PATTERN FORMING PROCESS | SLC6A5, HNRNPU, SLC6A9 | ALDH1A1 4876/4885TSHR 1960/4885MAPK1 1857/4885 |
| US-11994799-B2 | Negative resist composition and pattern forming process | GABRE, ZW10, VIM | ALDH1A1 4756/4885TSHR 3604/4885MAPK1 3275/4885 |
| US-12001139-B2 | Resist composition and patterning process | HNRNPU, HNRNPR, FGR | ALDH1A1 4842/4885TSHR 2091/4885MAPK1 1515/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.