⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6788511 | 0.80 | LMNA (0.38) | — | |
| SCHEMBL7965471 | 0.79 | CYP1A2 (0.34) | — | |
| SCHEMBL475144 | 0.78 | TSHR (0.43) | — | |
| SCHEMBL1121870 | 0.78 | TSHR (0.43) | — | |
| SCHEMBL14982575 | 0.78 | — | — | |
| SCHEMBL66105 | 0.76 | — | — | |
| SCHEMBL475145 | 0.76 | — | — | |
| SCHEMBL72419 | 0.76 | — | — | |
| SCHEMBL3315046 | 0.76 | — | — | |
| SCHEMBL2504598 | 0.75 | ALDH1A1 (0.36) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1222 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20100239982-A1 | Photoresist composition with high etching resistance | CHEIL INDUSTRIES, INC. (KR) | 2010-09-23 | — | — | US | claimed |
| US-20100233620-A1 | Copolymer and photoresist composition including the same | CHEIL INDUSTRIES, INC. (KR) | 2010-09-16 | — | — | US | claimed |
| WO-2009069848-A1 | NOVEL COPOLYMERS AND PHOTORESIST COMPOSITION INCLUDING THE SAME | CHEIL INDUSTRIES INC. (KR) | 2009-06-04 | — | — | WO | claimed |
| WO-2009069847-A1 | PHOTORESIST COMPOSITION WITH HIGH ETCHING RESISTANCE | CHEIL INDUSTRIES INC. (KR) | 2009-06-04 | — | — | WO | claimed |
| US-7351521-B2 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2008-04-01 | — | — | US | claimed |
| US-20070172762-A1 | Photoresist composition for deep ultraviolet lithography | DAMMEL RALPH R | 2007-07-26 | — | — | US | claimed |
| US-20070154841-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2007-07-05 | — | — | US | claimed |
| US-7211366-B2 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. (US) | 2007-05-01 | — | — | US | claimed |
| US-20040166434-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2004-08-26 | — | — | US | claimed |
| US-20040166433-A1 | Photoresist composition for deep ultraviolet lithography | AZ ELECTRONIC MATERIALS USA CORP. | 2004-08-26 | — | — | US | claimed |
| US-6730451-B2 | FLUOROACRYLATE POLYMERS; TRANSPARENCY; PREVENTING NEGATIVE WORKING; LOW ABSORPTION OF FLUORINE EXCIMER LASER LIGHT; HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-05-04 | — | — | US | claimed |
| US-6623909-B2 | Polysiloxane | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-09-23 | — | — | US | claimed |
| US-6596463-B2 | Photosensitivity, resolution, chemical resistance | SHIN-ETSU CHEMICAL, CO., LTD. (JP) | 2003-07-22 | — | — | US | claimed |
| US-6461789-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASERS, AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6461790-B1 | NOVEL POLYMER HAVING HIGH TRANSMITTANCE TO VACUUM ULTRAVIOLET RADIATION OF UP TO 300 NANOMETERS; RESIST MATERIALS HAVE SUFFICIENT TRANSPARENCY IN REGION OF EXCIMER LASER AND SATISFY RESOLUTION AND SENSITIVITY REQUIREMENTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | claimed |
| US-6436606-B1 | POLYMERS AND PHOTORESISTS COATING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-08-20 | — | — | US | claimed |
| US-6369279-B1 | STYRENE WITH ETHER OR FLUORINE GROUPS FOR POLYMERS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2002-04-09 | — | — | US | claimed |
| US-20240241442-A1 | Positive Resist Material And Patterning Process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-07-18 | — | — | US | disclosed |
| EP-0105227-A1 | Process for producing beta-lactam compounds, and intermediates useful for their production | Sanraku Incorporated (JP) | 1984-04-11 | — | — | EP | disclosed |
| EP-0040408-A1 | Beta-lactam compounds and process for production thereof | SANRAKU-OCEAN CO., LTD. (JP) | 1981-11-25 | — | — | EP | disclosed |