SCHEMBL6721030

SCHEMBL6721030

CC(C)(SC(=S)c1ccc(C(=O)c2ccccc2)cc1)c1ccccc1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.45
SRD5A2 P31213 3/20 0.44
ELANE P08246 5/20 0.44
VNN1 O95497 1/20 0.42
RAB9A P51151 2/20 0.42
HPGD P15428 2/20 0.42
NPC1 O15118 1/20 0.42
L3MBTL1 Q9Y468 2/20 0.40
ATM Q13315 1/20 0.40
TDP1 Q9NUW8 1/20 0.40
MEN1 O00255 1/20 0.40
LMNA P02545 1/20 0.40
MAPT P10636 1/20 0.40
KMT2A Q03164 1/20 0.40
MAPK13 O15264 1/20 0.40
MAPK12 P53778 1/20 0.40
MAPK11 Q15759 1/20 0.40
MAPK14 Q16539 1/20 0.40
ABCC9 O60706 2/20 0.39
ABCC8 Q09428 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL164092 0.90 ALDH1A1 (0.38) ALDH1A1L3MBTL1TDP1MEN1LMNA
SCHEMBL1524290 0.86 EPHX1 (0.40) ALDH1A1RAB9ANPC1L3MBTL1TDP1
SCHEMBL6721098 0.85 ALDH1A1 (0.50) ALDH1A1SRD5A2ELANERAB9AHPGD
SCHEMBL165630 0.82 CES2 (0.39) ALDH1A1RAB9ANPC1L3MBTL1MEN1
SCHEMBL19355148 0.81 RXRA (0.36) ALDH1A1MAPT
SCHEMBL6720995 0.80 SMN1; SMN2 (0.39) ALDH1A1RAB9ANPC1L3MBTL1TDP1
SCHEMBL163804 0.79 KMT2A (0.41) ALDH1A1RAB9ANPC1L3MBTL1MEN1
SCHEMBL21382782 0.77 EPHX1 (0.39) ALDH1A1VNN1L3MBTL1TDP1MAPT
SCHEMBL16300519 0.75 ALDH1A1 (0.56) ALDH1A1SRD5A2ELANERAB9AHPGD
SCHEMBL822806 0.74 EPHX1 (0.42) ALDH1A1ELANERAB9ANPC1TDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 US disclosed
EP-1975712-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-10-01 EP disclosed