SCHEMBL6722016

SCHEMBL6722016

CCC(C)c1ccc(Cn2c3ccccc3c(=O)c3ccccc32)cc1

nearest known ligand 0.64

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ P2RX4 Q99571 5/20 0.64
▸ ALDH1A1 P00352 1/20 0.53
▸ CYP19A1 P11511 1/20 0.47
▸ PTGS2 P35354 2/20 0.47
▸ NTRK1 P04629 1/20 0.46
▸ PTPN1 P18031 1/20 0.44
▸ HDAC6 Q9UBN7 3/20 0.44
▸ HDAC3 O15379 1/20 0.44
▸ KMT2A Q03164 2/20 0.43
▸ MAPK1 P28482 1/20 0.43
▸ SMN1; SMN2 Q16637 1/20 0.43
▸ MEN1 O00255 1/20 0.43
▸ HDAC1 Q13547 1/20 0.43
▸ HDAC10 Q969S8 1/20 0.43
▸ GLA P06280 1/20 0.42
▸ RXFP1 Q9HBX9 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6721982 0.91 CYP19A1 (0.58) P2RX4CYP19A1PTPN1HDAC6HDAC3
SCHEMBL10178647 0.85 P2RX4 (0.57) P2RX4ALDH1A1CYP19A1PTGS2NTRK1
SCHEMBL10179380 0.79 ALDH1A1 (0.46) P2RX4ALDH1A1PTGS2NTRK1SMN1; SMN2
SCHEMBL10178704 0.79 PTGS2 (0.54) P2RX4ALDH1A1PTGS2NTRK1GLA
SCHEMBL29904927 0.78 P2RX4 (1.00) P2RX4ALDH1A1CYP19A1NTRK1KMT2A
SCHEMBL14160818 0.78 P2RX4 (1.00) P2RX4ALDH1A1CYP19A1NTRK1KMT2A
SCHEMBL17954557 0.77 PPARG (0.44) CYP19A1
SCHEMBL14094188 0.77 ALDH1A1 (0.67) ALDH1A1KMT2AMAPK1MEN1
SCHEMBL10180106 0.77 PTGS2 (0.52) P2RX4ALDH1A1PTGS2NTRK1KMT2A
SCHEMBL10178502 0.75 CYP19A1 (0.53) P2RX4CYP19A1NTRK1KMT2AMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9612535-B2 Pattern forming method, electron beam- or extreme ultraviolet-sensitive resin composition, resist film using the same, method of manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2017-04-04 — — US disclosed
US-9323150-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern FUJIFILM CORPORATION (JP) 2016-04-26 — — US disclosed
US-20150370170-A1 PATTERN FORMING METHOD, ELECTRON BEAM- OR EXTREME ULTRAVIOLET-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE SAME, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-12-24 — — US disclosed
US-9188862-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the same FUJIFILM CORPORATION (JP) 2015-11-17 — — US disclosed
US-20140295332-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2014-10-02 — — US disclosed
US-20140227636-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-14 — — US disclosed
US-8771924-B2 Polymerizable composition, lithographic printing plate precursor and lithographic printing method FUJIFILM CORPORATION (JP) 2014-07-08 — — US disclosed
US-8182975-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-05-22 — — US disclosed
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 — — US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 — — US disclosed
US-20080248419-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-09 — — US disclosed
EP-1975712-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-10-01 — — EP disclosed
US-20080199804-A1 Including free radical binder polymer containing functional group having dipole moment of 3.8 debye; laser computer controlled direct plate making without alkali development; sensitivity, printing durability FUJIFILM CORPORATION (JP) 2008-08-21 — — US disclosed
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