Known targets — ChEMBL curated mechanism
AGTR1DHFRGABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTNR3C2PBP2XPTGS1PTGS2VKORC1blablaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAftsImrcAmrcBmrdApbp1apbp1bpbp2apbp2bpbp3polthyA
The experimentally established mechanism targets of Propanol. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Propanol SCHEMBL29234086 | 0.95 | — | — | |
| Propanol SCHEMBL27909968 | 0.90 | — | — | |
| Propanol SCHEMBL5697781 | 0.90 | — | — | |
| Propanol SCHEMBL28002937 | 0.90 | — | — | |
| Propanol SCHEMBL29500439 | 0.89 | — | — | |
| Propanol SCHEMBL29500448 | 0.89 | — | — | |
| Propanol SCHEMBL1478 | 0.89 | — | — | |
| Propanol SCHEMBL29558344 | 0.89 | — | — | |
| Propanol SCHEMBL15524986 | 0.89 | ALDH1A1 (0.58) | — | |
| Propanol SCHEMBL8328980 | 0.89 | ALDH1A1 (0.58) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-103992255-B | Method for preparing high-purity xanthophylls with calendula officinalis | 云南云药医药研究有限公司 | 2017-01-18 | — | — | CN | claimed |
| CN-103992255-A | Method for preparing high-purity xanthophylls with calendula officinalis | YUNNAN YUNYAO PHARMACEUTICAL RES CO LTD | 2014-08-20 | — | — | CN | claimed |
| CN-100503610-C | Benzoporphyrin chlorophyll photosensitizer and its preparation process and use | UNIV PLA 2ND MILITARY MEDICAL (CN) | 2009-06-24 | — | — | CN | claimed |
| CN-1844122-A | Benzoporphyrin chlorophyll photosensitizer and its preparation process and use | UNIV PLA 2ND MILITARY MEDICAL (CN) | 2006-10-11 | — | — | CN | claimed |
| US-4090915-A | Forming patterned polycrystalline silicon | RCA CORPORATION (US) | 1978-05-23 | — | — | US | claimed |
| CN-118947238-A | Sealing agent for organic electroluminescent element, sealing material, organic electroluminescent display device, and method for producing sealing agent for organic electroluminescent element | 电化株式会社 | 2024-11-12 | — | — | CN | disclosed |
| CN-115286776-B | Preparation method of polybutylene adipate/terephthalate | 富海(东营)新材料科技有限公司 | 2022-12-06 | — | — | CN | disclosed |
| CN-115286776-A | Preparation method of polybutylene adipate/terephthalate | 富海(东营)新材料科技有限公司 | 2022-11-04 | — | — | CN | disclosed |
| CN-112999252-B | Industrial method for continuously extracting high-content marigold flavone | 晨光生物科技集团股份有限公司 | 2022-05-20 | — | — | CN | disclosed |
| CN-112999252-A | Industrial method for continuously extracting high-content marigold flavone | 晨光生物科技集团股份有限公司 | 2021-06-22 | — | — | CN | disclosed |
| CN-107417663-A | A kind of preparation method of high-purity (S) 3 methylamino 1 (base of thiophene 2) propyl alcohol | 台州职业技术学院 | 2017-12-01 | — | — | CN | disclosed |
| CN-106674205-A | Sartan compound discoloration method | 浙江华海药业股份有限公司 | 2017-05-17 | — | — | CN | disclosed |
| US-4232327-A | Extended drain self-aligned silicon gate MOSFET | RCA CORPORATION (US) | 1980-11-04 | — | — | US | disclosed |
| US-4231820-A | Method of making a silicon diode array target | RCA CORPORATION (US) | 1980-11-04 | — | — | US | disclosed |
| US-4225875-A | Short channel MOS devices and the method of manufacturing same | RCA CORPORATION (US) | 1980-09-30 | — | — | US | disclosed |
| US-4201603-A | Method of fabricating improved short channel MOS devices utilizing selective etching and counterdoping of polycrystalline silicon | RCA CORPORATION (US) | 1980-05-06 | — | — | US | disclosed |
| US-4200878-A | Method of fabricating a narrow base-width bipolar device and the product thereof | RCA CORPORATION (US) | 1980-04-29 | — | — | US | disclosed |
| US-4177390-A | A field effect transistor logic gate having depletion mode and enhancement mode transistors | RAYTHEON COMPANY (US) | 1979-12-04 | — | — | US | disclosed |
| US-4090915-A | Forming patterned polycrystalline silicon | RCA CORPORATION (US) | 1978-05-23 | — | — | US | disclosed |
| US-4054895-A | Silicon-on-sapphire mesa transistor having doped edges | RCA CORPORATION (US) | 1977-10-18 | — | — | US | disclosed |