SCHEMBL682847

SCHEMBL682847

CCC(C)c1ccc(OC(C)OCCOc2ccc(C(C)C)cc2C(C)C)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KCNH2 Q12809 1/20 0.39
ALDH1A1 P00352 6/20 0.37
TSHR P16473 1/20 0.37
TDP1 Q9NUW8 2/20 0.35
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
SLC7A5 Q01650 1/20 0.34
SMN1; SMN2 Q16637 2/20 0.33
HTT P42858 1/20 0.33
MAOB P27338 1/20 0.32
MAPT P10636 3/20 0.32
L3MBTL1 Q9Y468 3/20 0.32
LMNA P02545 3/20 0.32
MAPK1 P28482 1/20 0.32
TP53 P04637 1/20 0.32
ALOX12 P18054 1/20 0.32
GAA P10253 1/20 0.32
NPC1 O15118 1/20 0.32
RAB9A P51151 1/20 0.32
CYP1A2 P05177 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14252161 0.86 ALDH1A1 (0.38) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL682846 0.82 ALDH1A1 (0.41) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL14258895 0.81 ALDH1A1 (0.47) ALDH1A1TSHRTDP1MEN1KMT2A
SCHEMBL683275 0.80 ALDH1A1 (0.39) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL12974589 0.80 SLC7A5 (0.36) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL682226 0.80 SLC7A5 (0.39) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL2758468 0.79 HIF1A (0.46) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL682074 0.79 SMN1; SMN2 (0.39) ALDH1A1TSHRMEN1KMT2ASMN1; SMN2
SCHEMBL2758505 0.79 SLC7A5 (0.38) KCNH2ALDH1A1TSHRTDP1MEN1
SCHEMBL2758494 0.78 SLC7A5 (0.37) KCNH2ALDH1A1TSHRTDP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-7344821-B2 Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same FUJIFILM CORPORATION (JP) 2008-03-18 US disclosed
US-7326513-B2 Positive working resist composition FUJIFILM CORPORATION (JP) 2008-02-05 US disclosed