Indene

Indene

SCHEMBL6835844

C1=Cc2ccccc2C1.C=Cc1ccc(OCC(=O)OC(C)(C)C)cc1.C=Cc1ccccc1O

nearest known ligand 0.39

Full drug profile on Sugi Atlas →

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.39
NPC1 O15118 1/20 0.39
RAB9A P51151 1/20 0.39
KMT2A Q03164 1/20 0.39
PTPN1 P18031 4/20 0.35
MAPT P10636 2/20 0.34
LMNA P02545 1/20 0.34
PSEN1 P49768 2/20 0.32
PSEN2 P49810 2/20 0.32
APH1B Q8WW43 2/20 0.32
NCSTN Q92542 2/20 0.32
APH1A Q96BI3 2/20 0.32
PSENEN Q9NZ42 2/20 0.32
POLB P06746 1/20 0.31
CYP2C9 P11712 1/20 0.31
HPGD P15428 1/20 0.31
CYP2C19 P33261 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
SIGMAR1 Q99720 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Indene SCHEMBL6053387 0.86 ELANE (0.37)
Indene SCHEMBL6053478 0.82 ELANE (0.37) MEN1NPC1RAB9AKMT2AMAPT
Indene SCHEMBL6053432 0.81 MAPT (0.39) MEN1NPC1RAB9AKMT2AMAPT
Indene SCHEMBL6053299 0.80 BCL9 (0.34) MEN1KMT2AMAPTLMNAHPGD
Indene SCHEMBL15048570 0.80 RELA (0.40) MEN1NPC1RAB9AKMT2AMAPT
Indene SCHEMBL6053279 0.79 KMT2A (0.36) MEN1KMT2AHPGD
Indene SCHEMBL6834259 0.79 CYP2D6 (0.36) NPC1RAB9AMAPTLMNACYP2C19
Indene SCHEMBL15048613 0.78 CYP2C19 (0.39) MAPTCYP2C9CYP2C19
Styrene SCHEMBL7270853 0.76 PTPN1 (0.49) MEN1NPC1RAB9AKMT2APTPN1
SCHEMBL412718 0.76 MEN1 (0.50) MEN1NPC1RAB9AKMT2APTPN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6746817-B2 ACID LABILE GROUPS INCREASE ALKALI SOLUBILITY; HAVING INCREASED ALKALI DISSOLUTION RATE BEFORE AND AFTER RADIATION EXPOSURE, HIGH SENSITIVITY, HIGH RESOLUTION, AND ETCHING RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2004-06-08 US disclosed
US-20020081521-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-06-27 US disclosed